All Categories (1-20 of 37)

1. Technology Characterization and Radiation-Enabled Modeling

   03 Apr 2024 | | Contributor(s):: Jeffrey S. Kauppila

2. 

   Silvaco, Inc.

   Silvaco Inc. is a leading EDA tools and semiconductor IP provider used for process and device development for advanced semiconductors, power IC, display and memory design. For over 30 years,...

   https://nanohub.org/members/437502

3. Radiation Enabled Model Development and Validation

   08 Mar 2024 | | Contributor(s):: Jeffrey S. Kauppila

   This lecture will discuss techniques and methods for modeling single-event radiation effects at the transistor and circuit level. The lecture will also cover topics related to the validation of models using test data from custom on-chip measurement techniques developed over the last decade.

4. Modeling Radiation Effects from the Component Level to the System Level

   24 Oct 2023 | | Contributor(s):: Ronald Schrimpf

5. Technology Computer Aided Design (TCAD) Device and Mixed Mode Simulation Tools

   21 Feb 2023 | | Contributor(s):: Hugh Barnaby

6. Silvaco TCAD

   28 Sep 2022 | | Contributor(s):: Eric Guichard, Silvaco, Inc.

   SILVACO Semiconductor Process and Device Simulation for Educational Purposes Only, see License below.

7. 

   Eric Guichard

   Eric Guichard, Ph.D., has served as Silvaco’s Senior Vice President and General Manager of TCAD Business Unit since November 2012, and as Silvaco’s Vice President of Applications from July 2008 to...

   https://nanohub.org/members/378086

8. 

   Amir Sharfuddin

   https://nanohub.org/members/331936

9. how I simulate cmos inverter in TCAD

   Q&A|Closed | Responses: 3

   https://nanohub.org/answers/question/2415

10. 

    Neeraj Tripathi

    https://nanohub.org/members/266406

11. What should be measurement for zener diode simulation in TCAD?

    Q&A|Closed | Responses: 1

    Hello,

    I'm an electronics engineering student working on semiconductor device simulation using VisualTCAD software in my institute.

    I design pn junction successfully with...

    https://nanohub.org/answers/question/2081

12. 

    Ali HOUADEF

    https://nanohub.org/members/200477

13. CNT Creating Python script

    05 Jul 2017 | | Contributor(s):: Saksham Soni

    It can work through running python script directly on PC without using Internet . Just you download and install NanoTCAD ViDES and then we can simulate CNT and GNR without using nanohub or internet.

14. TCAD Code for Simulation of Single and Dual Active Layer Oxide TFTs

    19 Apr 2017 | | Contributor(s):: Kevin Stewart

    Silvaco ATLAS 2D device simulation software was used to simulate single and dual active layer oxide TFTs. The input files for two cases are attached: 30 nm IGZO TFT 3/27 nm ITO/IGZO TFT

15. TCAD Files For Simulation Of Boron Indium Oxide Thin Film Transistors

    09 Feb 2017 | | Contributor(s):: Kevin Stewart

    Silvaco ATLAS 2D device simulation software was used to simulate BIO TFTs. The input files for two cases are attached: Simulation of device annealed at 200 °C Simulation of device annealed at 400 °C

16. Simulation of surface depletion in GaAs

    Q&A|Closed | Responses: 0

    I have some problems when simulating the surface depletion in an epitaxial GaAs layer with ATLAS. According to the abrupt depletion aproximation, the depletion region extends to a depth...

    https://nanohub.org/answers/question/1743

17. How to define source and drain region for 3D cylindrical VNAND flash memory cell structure

    Q&A|Closed | Responses: 1

    Hi,

    Can anybody help me in creating source/drain region if I want to create a 3D cylindrical SONOS memory using Sentaurus Structure Editor? I can give more details based on your...

    https://nanohub.org/answers/question/1624

18. 

    Ozgur Polat

    https://nanohub.org/members/104542

19. Nanoscale MOSFETS: Physics, Simulation and Design

    28 Jun 2013 | | Contributor(s):: Zhibin Ren

    This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of appropriate physics and methodology in device modeling, 2)development of a new TCAD (technology computer aided...

20. Simulation time

    Q&A|Closed | Responses: 1

    Do not know why, but despite the 21 points simulation asked (default), the simulation actually calculates ~500 voltage points and the simulation last 15-30’. Did I miss something ?

    https://nanohub.org/answers/question/1103