Resources (1-6 of 6)

1. Unimore Resistive Random Access Memory (RRAM) Verilog-A Model

   22 May 2019 | Compact Models | Contributor(s):

   By Francesco Maria Puglisi¹, Tommaso Zanotti¹, Paolo Pavan¹

   Università di Modena e Reggio Emilia

   The Unimore RRAM Verilog-A model is a physics-based compact model of bipolar RRAM which includes cycle-to-cycle variability, thermal effects, self-heating, and multilevel Random Telegraph Noise (RTN).

   https://nanohub.org/publications/289/?v=1

2. Stanford 2D Semiconductor (S2DS) Transistor Model

   11 Aug 2018 | Compact Models | Contributor(s):

   By Saurabh Vinayak Suryavanshi¹, Eric Pop¹

   Stanford University

   The Stanford 2D Semiconductor (S2DS) model is a physics-based, compact model for field-effect transistors (FETs) based on two-dimensional (2D) semiconductors such as MoS2.

   https://nanohub.org/publications/18/?v=3

3. Stanford 2D Semiconductor Quasi-Ballistic Transistor Compact Model

   11 Aug 2018 | Compact Models | Contributor(s):

   By Saurabh Vinayak Suryavanshi¹, Eric Pop¹

   Stanford University

   The S2DSb compact model is based on MVS model and captures the quasi-ballistic transport in two-dimensional field effect transistors (2D FETs). It also includes a detailed device self-heating model...

   https://nanohub.org/publications/248/?v=1

4. Stanford 2D Semiconductor (S2DS) Transistor Model

   04 Apr 2016 | Compact Models | Contributor(s):

   By Saurabh Vinayak Suryavanshi¹, Eric Pop¹

   Stanford University

   The Stanford 2D Semiconductor (S2DS) model is a physics-based, compact model for field-effect transistors (FETs) based on two-dimensional (2D) semiconductors such as MoS2.

   https://nanohub.org/publications/18/?v=2

5. A Verilog-A Compact Model for Negative Capacitance FET

   28 Nov 2015 | Compact Models | Contributor(s):

   By Muhammad Abdul Wahab¹, Muhammad A. Alam¹

   Purdue University

   The NC-FET compact model is a semi-physical verilog-A model of the negative capacitance transistor. We developed this self-consistent model with BSIM4/MVS and Landau theory. This model is useful to...

   https://nanohub.org/publications/95/?v=1

6. Stanford 2D Semiconductor (S2DS) Transistor Model

   22 Oct 2014 | Compact Models | Contributor(s):

   By Saurabh Vinayak Suryavanshi¹, Eric Pop¹

   Stanford University

   The Stanford 2D Semiconductor (S2DS) model is a physics-based, compact model for field-effect transistors (FETs) based on two-dimensional (2D) semiconductors such as MoS2.

   https://nanohub.org/publications/18/?v=1