Stanford 2D semiconductor quasi-ballistic (S2DSb) transistor model is a physics-based compact model for quasi-ballistic 2D field-effect transistors (FETs). The model implementation is based on the MIT virtual source model. In addition to the quasi-ballistic transport, we also include a self-consistent model for device self-heating that appropriately captures the device temperature. 2D FETs, which can be considered as an extreme of silicon-on-insulator technology with an extremely thin (sub-nm) body, have a large thermal resistance and the device self-heating plays a significant role in the carrier transport. Both the quasi-ballistic transport and the device self-heating models are verified independently by experiments. We also provide a set of parameters based on calibration to 10 nm channel single-layer n-type MoS₂ FET. 

• Stanford 2D Semiconductor Quasi-Ballistic Transistor Compact Model 1.0.0 Verilog-A(VA | 13 KB)
• Stanford 2D Semiconductor Quasi-Ballistic Transistor Compact Model 1.0.0 Benchmarks(ZIP | 2 KB)
• Stanford 2D Semiconductor Quasi-Ballistic Transistor Compact Model 1.0.0 Parameters(PDF | 314 KB)
• Stanford 2D Semiconductor Quasi-Ballistic Transistor Compact Model 1.0.0 Experimental Data(ZIP | 2 KB)
• Stanford 2D Semiconductor Quasi-Ballistic Transistor Compact Model 1.0.0 Manual(PDF | 413 KB)
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Researchers should cite this work as follows:

• Suryavanshi, S. V.; Pop, E. (2018). Stanford 2D Semiconductor Quasi-Ballistic Transistor Compact Model. nanoHUB. doi:10.4231/D3F18SH56

  BibTex | EndNote

1. 2D FET
2. Ballistic Nanotransistor
3. ballistic transport
4. MoS2 Transistor
5. self-heating effects
6. virtual source model