Tags: NEGF

Description

The non-equilibrium Greens function (NEGF) formalism provides a powerful conceptual and computational framework for treating quantum transport in nanodevices. It goes beyond the Landauer approach for ballistic, non-interacting electronics to include inelastic scattering and strong correlation effects at an atomistic level.

Check out Supriyo Datta's NEGF page for more information, or browse through the various resources listed below.

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  1. Paolo Sanvito

    Electronic Engineer I.E.E.E. former member, Designer , an important Patent Granted through an innovative modulation in the field of the Energy Conversion . Researcher

    https://nanohub.org/members/145329

  2. Atomistic Modeling of Nano Devices: From Qubits to Transistors

    Online Presentations | 13 Apr 2016 | Contributor(s):: Rajib Rahman

    In this talk, I will describe such a framework that can capture complex interactions ranging from exchange and spin-orbit-valley coupling in spin qubits to non-equilibrium charge transport in tunneling transistors. I will show how atomistic full configuration interaction calculations of exchange...

  3. Self-energies: Opening Doors for Nanotechnology

    Online Presentations | 07 Apr 2016 | Contributor(s):: Tillmann Christoph Kubis

    In this talk, it will be shown how the concept of self-energies can be used to interface all these fields into the same nanotechnology modeling framework. Self-energies are most commonly used in the quantum transport method of nonequilibrium Green’s functions (NEGF). The NEGF method is...

  4. MATLAB codes from the "Lessons from Nanoelectronics"

    Downloads | 10 Dec 2015 | Contributor(s):: Supriyo Datta

    The .zip archive contains all the codes from the book.You can download and unzip the file to access the codes organized in folders (titled by the Lecture number).You can run this on MATLAB or use the OCTAViEw tool on nanoHUB.

  5. Phonon Interactions in Single-Dopant-Based Transistors: Temperature and Size Dependence

    Online Presentations | 25 Nov 2015 | Contributor(s):: Marc Bescond, Nicolas Cavassilas, Salim Berrada

    IWCE 2015 presentation. in this work we investigate the dependence of electron-phonon scattering in single dopant-based nanowire transistor with respect to temperature and dimensions. we use a 3d real-space non-equilibrium green': ; s function (negf) approach where electron-phonon...

  6. Mode Space Tight Binding Model for Ultra-Fast Simulations of III-V Nanowire MOSFETs and Heterojunction TFETs

    Online Presentations | 13 Nov 2015 | Contributor(s):: Aryan Afzalian, Jun Huang, Hesameddin Ilatikhameneh, Santiago Alonso Perez Rubiano, Tillmann Christoph Kubis, Michael Povolotskyi, Gerhard Klimeck

    IWCE 2015 presentation.  we explore here the suitability of a mode space tight binding algorithm to various iii-v homo- and heterojunction nanowire devices. we show that in iii-v materials, the number of unphysical modes to eliminate is very high compared to the si case previously reported...

  7. Density Functional Tight Binding (DFTB) Modeling in the Context of Ultra-Thin Silicon-on-Insulator MOSFETs

    Online Presentations | 10 Oct 2015 | Contributor(s):: Stanislav Markov

    IWCE 2015 presentation. We investigate the applicability of density functional tight binding (DFTB) theory [1][2], coupled to non-equilibrium Green functions (NEGF), for atomistic simulations of ultra-scaled electron devices, using the DFTB+ code [3][4]. In the context of ultra-thin...

  8. Abhisek kole

    https://nanohub.org/members/130541

  9. Non-Equilibrium Green's Function (NEGF): A Different Perspective

    Online Presentations | 18 Sep 2015 | Contributor(s):: Supriyo Datta

    The NEGF method was established in the 1960’s through the classic work of Keldysh and others [1] using the methods of many- body perturbation theory (MBPT) and this approach is widely used in the literature [2]. By contrast I have introduced a different approach starting with the...

  10. 3D Topological Insulator Nanowire NEGF Simulation on GPU

    Downloads | 28 May 2015 | Contributor(s):: Gaurav Gupta

    This code developed in C and CUDA simulates the carrier transport in three-dimensional (3D) topological insulator (TI) nanowire, with Bi2Se3 as exemplar material, with or without impurities, edge defects, acoustic phonons and vacancies for semi-infinite or metallic...

  11. Nartowt,bradley Joseph

    https://nanohub.org/members/122944

  12. Modular Approach to Spintronics

    Papers | 28 Apr 2015 | Contributor(s):: Kerem Yunus Camsari

    There has been enormous progress in the last two decades, effectively combining spintronics and magnetics into a powerful force that is shaping the field of memory devices. New materials and phenomena continue to be discovered at an impressive rate, providing an ever-increasing set of building...

  13. The NEGF Approach to Nano-Device Simulation

    Wiki

    The non-equilibrium Greens function (NEGF) formalism provides a powerful conceptual and computational framework for treating quantum transport in nanodevices. It goes beyond the Landauer...

    https://nanohub.org/wiki/Negf

  14. Issue in obtaining solution of Poisson eq. for self-consistent calculation in NEGF

    Q&A|Closed | Responses: 1

    Hi,

    I’ve been working on an exercise matlab code posted by Prof. S. Datta. ( https://nanohub.org/answers/question/1383

  15. Which tool can I use to simulate RITD?

    Q&A|Closed | Responses: 0

    https://nanohub.org/answers/question/1359

  16. Magnetic Tunnel Junction Lab

    Tools | 23 Sep 2013 | Contributor(s):: Samiran Ganguly, Deepanjan Datta, Chen Shang, Sankarsh Ramadas, Sayeef Salahuddin, Supriyo Datta

    Calculate Resistance, Tunneling Magneto Resistance, Spin Torques, and Switching characteristics of a Magnetic Tunnel Junction

  17. Efficiency Enhancement for Nanoelectronic Transport Simulations

    Papers | 01 Feb 2014 | Contributor(s):: Jun Huang

    PhD thesis of Jun HuangContinual technology innovations make it possible to fabricate electronic devices on the order of 10nm. In this nanoscale regime, quantum physics becomes critically important, like energy quantization effects of the narrow channel and the leakage currents due to tunneling....

  18. DrMohan L Verma

    I want to learn ner tools for material characterization. Specially theoretical tools related to computational nanoscience. Solid state battery and other electrochemical device based materials are...

    https://nanohub.org/members/95448

  19. Zhichao Yang

    https://nanohub.org/members/89859

  20. MATLAB codes from "Nanoscale device modeling: the Green's function method"

    Downloads | 09 Oct 2013 | Contributor(s):: Supriyo Datta

    The MATLAB programs used to generate the figures in the article that appeared in Superlattices and Microstructures, vol.28, p.253 (2000).