Description

Resources (21-40 of 174)

1. Phonon Interactions in Single-Dopant-Based Transistors: Temperature and Size Dependence

   Online Presentations | 25 Nov 2015 | Contributor(s):: Marc Bescond, Nicolas Cavassilas, Salim Berrada

   IWCE 2015 presentation. in this work we investigate the dependence of electron-phonon scattering in single dopant-based nanowire transistor with respect to temperature and dimensions. we use a 3d real-space non-equilibrium green': ; s function (negf) approach where electron-phonon...

2. Mode Space Tight Binding Model for Ultra-Fast Simulations of III-V Nanowire MOSFETs and Heterojunction TFETs

   Online Presentations | 13 Nov 2015 | Contributor(s):: Aryan Afzalian, Jun Huang, Hesameddin Ilatikhameneh, Santiago Alonso Perez Rubiano, Tillmann Christoph Kubis, Michael Povolotskyi, Gerhard Klimeck

   IWCE 2015 presentation.  we explore here the suitability of a mode space tight binding algorithm to various iii-v homo- and heterojunction nanowire devices. we show that in iii-v materials, the number of unphysical modes to eliminate is very high compared to the si case previously reported...

3. Density Functional Tight Binding (DFTB) Modeling in the Context of Ultra-Thin Silicon-on-Insulator MOSFETs

   Online Presentations | 10 Oct 2015 | Contributor(s):: Stanislav Markov

   IWCE 2015 presentation. We investigate the applicability of density functional tight binding (DFTB) theory [1][2], coupled to non-equilibrium Green functions (NEGF), for atomistic simulations of ultra-scaled electron devices, using the DFTB+ code [3][4]. In the context of ultra-thin...

4. Non-Equilibrium Green's Function (NEGF): A Different Perspective

   Online Presentations | 18 Sep 2015 | Contributor(s):: Supriyo Datta

   The NEGF method was established in the 1960’s through the classic work of Keldysh and others [1] using the methods of many- body perturbation theory (MBPT) and this approach is widely used in the literature [2]. By contrast I have introduced a different approach starting with the...

5. 3D Topological Insulator Nanowire NEGF Simulation on GPU

   Downloads | 28 May 2015 | Contributor(s):: Gaurav Gupta

   This code developed in C and CUDA simulates the carrier transport in three-dimensional (3D) topological insulator (TI) nanowire, with Bi2Se3 as exemplar material, with or without impurities, edge defects, acoustic phonons and vacancies for semi-infinite or metallic...

6. Modular Approach to Spintronics

   Papers | 28 Apr 2015 | Contributor(s):: Kerem Yunus Camsari

   There has been enormous progress in the last two decades, effectively combining spintronics and magnetics into a powerful force that is shaping the field of memory devices. New materials and phenomena continue to be discovered at an impressive rate, providing an ever-increasing set of building...

7. Magnetic Tunnel Junction Lab

   Tools | 23 Sep 2013 | Contributor(s):: Samiran Ganguly, Deepanjan Datta, Chen Shang, Sankarsh Ramadas, Sayeef Salahuddin, Supriyo Datta

   Calculate Resistance, Tunneling Magneto Resistance, Spin Torques, and Switching characteristics of a Magnetic Tunnel Junction

8. Efficiency Enhancement for Nanoelectronic Transport Simulations

   Papers | 01 Feb 2014 | Contributor(s):: Jun Huang

   PhD thesis of Jun HuangContinual technology innovations make it possible to fabricate electronic devices on the order of 10nm. In this nanoscale regime, quantum physics becomes critically important, like energy quantization effects of the narrow channel and the leakage currents due to tunneling....

9. MATLAB codes from "Nanoscale device modeling: the Green's function method"

   Downloads | 09 Oct 2013 | Contributor(s):: Supriyo Datta

   The MATLAB programs used to generate the figures in the article that appeared in Superlattices and Microstructures, vol.28, p.253 (2000).

10. Physics and Simulation of Nanoscale Electronic and Thermoelectric Devices

    Papers | 25 Jun 2013 | Contributor(s):: raseong kim

    For the past few decades, transistors have been continuously scaled. Dimensions are now at the nanoscale, and device performance has dramatically improved. Nanotechnology is also achieving breakthroughs in thermoelectrics, which have suffered from low efficiencies for decades. As the device scale...

11. Device Physics Studies of III-V and Silicon MOSFETS for Digital Logic

    Papers | 25 Jun 2013 | Contributor(s):: Himadri Pal

    III-V's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before III-V's can replace silicon (Si) in extremely scaled devices. The effect of low density-of-states of III-V materials...

12. Quantum and Atomistic Effects in Nanoelectronic Transport Devices

    Papers | 26 Jun 2013 | Contributor(s):: Neophytos Neophytou

    As devices scale towards atomistic sizes, researches in silicon electronic device technology are investigating alternative structures and materials. As predicted by the International Roadmap for Semiconductors, (ITRS), structures will evolve from planar devices into devices that include 3D...

13. Exploring New Channel Materials for Nanoscale CMOS

    Papers | 27 Jun 2013 | Contributor(s):: Anisur Rahman

    The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the performance of nanoscale CMOS devices. Novel process techniques, such as ALD, high-# dielectrics, and...

14. Carbon Nanotube Electronics: Modeling, Physics, and Applications

    Papers | 27 Jun 2013 | Contributor(s):: Jing Guo

    In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport can be nearly ballistic across distances of several hundred nanometers. Deposition of high-k gate...

15. Physics and Simulation of Quasi-Ballistic Transport in Nanoscale Transistors

    Papers | 27 Jun 2013 | Contributor(s):: Jung-Hoon Rhew

    The formidable progress in microelectronics in the last decade has pushed thechannel length of MOSFETs into decanano scale and the speed of BJTs into hundreds of gigahertz. This progress imposes new challenges on device simulation as the essential physics of carrier transport departs that of...

16. Course on Beyond CMOS Computing

    Teaching Materials | 06 Jun 2013 | Contributor(s):: Dmitri Nikonov

    Complementary metal-oxide-semiconductor (CMOS) field effect transistors (FET) underpinned the development of electronics and information technology for the last 30 years. In an amazing saga of development, the semiconductor industry (with a leading role of Intel) has shrunk the size of these...

17. Dissipative Quantum Transport in Semiconductor Nanostructures

    Papers | 23 Dec 2011 | Contributor(s):: Peter Greck

    In this work, we investigate dissipative quantum transport properties of an open system. After presenting the background of ballistic quantum transport calculations, a simple scattering mechanism, called Büttiker Probes, is introduced. Then, we assess the properties of the Büttiker Probe model...

18. Green's Functions Method Explained

    Teaching Materials | 09 Aug 2011 | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    This is a tutorial on non-equilibrium Green's functions.

19. Tutorial 4: Far-From-Equilibrium Quantum Transport

    Courses | 23 Mar 2011 | Contributor(s):: Gerhard Klimeck

    These lectures focus on the application of the theories using the nanoelectronic modeling tools NEMO 1- D, NEMO 3-D, and OMEN to realistically extended devices. Topics to be covered are realistic resonant tunneling diodes, quantum dots, nanowires, and Ultra-Thin-Body Transistors.

20. Tutorial 4a: High Bias Quantum Transport in Resonant Tunneling Diodes

    Online Presentations | 23 Mar 2011 | Contributor(s):: Gerhard Klimeck

    Outline:Resonant Tunneling Diodes - NEMO1D: Motivation / History / Key InsightsOpen 1D Systems: Transmission through Double Barrier Structures - Resonant TunnelingIntroduction to RTDs: Linear Potential DropIntroduction to RTDs: Realistic Doping ProfilesIntroduction to RTDs: Relaxation Scattering...