All Categories (1-7 of 7)

1. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Characterization, Material/Process Dependence and Predictive Modeling

   Courses | 28 Mar 2012 | Contributor(s):: Souvik Mahapatra

   This is a presentation on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner SiON...

2. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Fast and Ultra-fast Characterization Methods (Part 1 of 3)

   Online Presentations | 28 Mar 2012 | Contributor(s):: Souvik Mahapatra

3. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Predictive Modeling (Part 3 of 3)

   Online Presentations | 28 Mar 2012 | Contributor(s):: Souvik Mahapatra

   This is a presentation on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner SiON...

4. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: The Impact of Gate Insulator Processes (Part 2 of 3)

   Online Presentations | 28 Mar 2012 | Contributor(s):: Souvik Mahapatra

   This presentation is part 2 on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner...

5. Theory and characterization of random defect formation and its implication in variability of nanoscale transistors

   Papers | 30 Sep 2011 | Contributor(s):: Ahmad Ehteshamul Islam

   Over the last 50 years, carrier transport has been the central research topic in the semiconductor area. The outcome was a dramatic improvement in the performance of a transistor, which is one of the basic building blocks in almost all the modern electronic devices. However, nanoscale dimensions...

6. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Characterization, Material/Process Dependence and Predictive Modeling (2011)

   Online Presentations | 11 May 2011 | Contributor(s):: Souvik Mahapatra

   This is a presentation on Negative Bias Temperature Instability, or in short NBTI, observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to...

7. Essential Aspects of Negative Bias Temperature Instability (NBTI)

   Online Presentations | 01 May 2011 | Contributor(s):: Ahmad Ehteshamul Islam, Souvik Mahapatra, Muhammad Alam

   We develop a comprehensive theoretical framework for explaining the key and characteristic experimental signatures of NBTI. The framework is based on an uncorrelated dynamics of interface-defect creation/annihilation described by Reaction-Diffusion (R-D) theory and hole trapping/detrapping...