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Faster Materials versus Nanoscaled Si and SiGe: A Fork in the Roadmap?
Online Presentations | 20 Apr 2004 | Contributor(s):: Jerry M. Woodall
Strained Si and SiGe MOSFET technologies face fundamental limits towards the end of this decade when the technology roadmap calls for gate dimensions of 45 nm headed for 22 nm. This fact, and difficulties in developing a suitable high-K dielectric, have stimulated the search for alternatives to...
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SURI 2003 Conference
Workshops | 07 Aug 2003
2003 SURI Conference Proceedings
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Digital Electronics: Fundamental Limits and Future Prospects
Online Presentations | 20 Jan 2004 | Contributor(s):: Konstantin K. Likharev
I will review some old and some recent work on the fundamental (and not so fundamental) limits imposed by physics of electron devices on their density and power consumption.
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A Personal Quest for Information
Online Presentations | 19 Feb 2004 | Contributor(s):: Vwani P. Roychowdhury
This talk will report results and conclusions from my personal investigations into several different disciplines, carried out with the unifying intent of uncovering some of the fundamental principles that govern representation, processing, and the communication of information. The specific...
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Nanoelectronics and the Future of Microelectronics
Online Presentations | 22 Aug 2002 | Contributor(s):: Mark Lundstrom
Progress in silicon technology continues to outpace the historic pace of Moore's Law, but the end of device scaling now seems to be only 10-15 years away. As a result, there is intense interest in new, molecular-scale devices that might complement a basic silicon platform by providing it...
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Nanoelectronic Scaling Tradeoffs: What does Physics Have to Say?
Presentation Materials | 23 Sep 2003 | Contributor(s):: Victor Zhirnov
Beyond CMOS, several completely new approaches to information-processing and data-storage technologies and architectures are emerging to address the timeframe beyond the current SIA International Technology Roadmap for Semiconductors (ITRS). A wide range of new ideas have been proposed for...
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Electronic Transport in Semi-conducting Carbon Nanotube Transistor Devices
Online Presentations | 16 Oct 2003 | Contributor(s):: Joerg Appenzeller
Recent demonstrations of high performance carbon nanotube field-effect transistors (CNFETs) highlight their potential for a future nanotube-based electronics. Besides being just a nanometer in diameter, carbon nanotubes offer intrinsic advantages if compared with silicon that are responsible for...
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Quantum-dot Cellular Automata
Online Presentations | 24 Nov 2003 | Contributor(s):: Craig S. Lent
The multiple challenges presented by the problem of scaling transistor sizes are all related to the fact that transistors encode binary information by the state of a current switch. What is required is a new paradigm, still capable of providing general purpose digital computation, but which can...
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Theory of Ballistic Nanotransistors
Papers | 27 Nov 2002 | Contributor(s):: Anisur Rahman, Jing Guo, Supriyo Datta, Mark Lundstrom
Numerical simulations are used to guide the development of a simple analytical theory for ballistic field-effect transistors. When two-dimensional electrostatic effects are small, (and when the insulator capacitance is much less than the semiconductor (quantum) capacitance), the model reduces to...