All Categories (1-12 of 12)

1. nanoMOS program

   Q&A|Closed | Responses: 1

   Does the nanoMOS tool work only on browsers? I was under the windows simulation now, I found that the simulation time is very long, I installed Linux systems, but found that the tool can not...

   https://nanohub.org/answers/question/1914

2. current.m generate a variable 'ans'

   Q&A|Closed | Responses: 0

   Whenever I am running current.m or current_dd.m I am getting a variable of 100x1 dimension 'ans' as the output.

   What is the significance of this?

   Rohan

   https://nanohub.org/answers/question/1906

3. Plotting drain current vs drain voltage

   Q&A|Closed | Responses: 0

   % ID-VD CHARACTERISTICS (A/m), SAVED TO "output_dir/IV.dat"
   % -------------------------------------------------
   if (Nd_step>=1 & Ng_step==0)https://nanohub.org/answers/question/1905

4. different materials giving the same current in nanoMOS

   Q&A|Closed | Responses: 0

   I have assigned a class project for my class where the students have to study different materials (Si, GaAs, etc) in a dual-gate structure using the nanoMOS toolkit. However, both Si and GaAs as...

   https://nanohub.org/answers/question/1643

5. problem in nanomos

   Q&A|Closed | Responses: 0

   I am facing problem while simulating in new version of nanomos. If I select the device SOI MOSFET or spinFET it shows only input and output deck after simualtion. No results are available.

   https://nanohub.org/answers/question/835

6. nanoMos 3,5 compare models

   Q&A|Closed | Responses: 0

   how can we compare the 3 models (Green’s funktion,semiclassical and Drift..) in nanoMos 3,5 and the graphs for first subband,electron density and velocity.What are diffrent between the 3...

   https://nanohub.org/answers/question/674

7. Scattering in NEGF: Made simple

   Papers | 09 Nov 2009 | Contributor(s):: Dmitri Nikonov, Himadri Pal, George Bourianoff

   Formalism for describing electron-phonon scattering, surface scattering, and spin relaxation is dervied for the Keldysh non-equilibrium Green's functions (NEGF) method. Approximation useful for efficient numerical solution are described. The specific case of the nanoMOS simulator is...

8. NanoMOS 3.5 (online Verison)

   Q&A|Open | Responses: 1

   When I used NanoMOS 3.5 on nanoHub, I got the same answers when I set Ambient Temperature at 200 & 300 K...

   https://nanohub.org/answers/question/326

9. silicon thickness

   Q&A|Open | Responses: 2

   hi, according to chapter 2 of ren’s thesis (fig.2.8), with decrease of silicon thickness, increase of on-current is observed but simulation results of nanomos shows opposite...

   https://nanohub.org/answers/question/283

10. poisson equation in si/oxid interface

    Q&A|Open | Responses: 1

    hi! i have a question about discontinuty of epsilon in sioxid interface. it seems in this position, epsilon is (epsilon_oxid+epsilon_si)/2 according to thesis of ren but he uses another mesh in...

    https://nanohub.org/answers/question/211

11. What is the double mosfte width(W) in nanoMos simulation?

    Q&A|Open | Responses: 2

    How much is the width(W) of double gate mosfet in nanoMos simulatin and how can I change it? Best regards

    https://nanohub.org/answers/question/207

12. double gate mosfet width (W) in nanoMos

    Q&A|Open | Responses: 2

    https://nanohub.org/answers/question/206