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Anisotropic Schrödinger Equation Quantum Corrections for 3D Monte Carlo Simulations of Nanoscale Multigate Transistors
Online Presentations | 05 Jan 2016 | Contributor(s):: Karol Kalna, Muhammad Ali A. Elmessary, Daniel Nagy, Manuel Aldegunde
IWCE 2015 presentation. We incorporated anisotropic 2D Schrodinger equation based quantum corrections (SEQC) that depends on valley orientation into a 3D Finite Element (FE) Monte Carlo (MC) simulation toolbox. The MC toolbox was tested against experimental ID-VG characteristics of the 22 nm gate...
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Quick Review of Semiconductor Fundamentals
Online Presentations | 05 Jan 2016 | Contributor(s):: Mark Lundstrom
This lecture quickly summarizes some important semiconductor fundamentals. For those acquainted with semiconductors, it may be useful as a brief refresher. For those just getting started with semiconductors, my hope is that this lecture provides just enough understanding to allow you to begin...
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Thermionic Escape in Quantum Well Solar Cell
Online Presentations | 18 Dec 2015 | Contributor(s):: Nicolas Cavassilas, Fabienne Michelini, Marc Bescond
This theoretical work analyzes the photogeneration and the escape of carrier in InGaN/GaN core-shell nanowires. Our electronic transport model considers quantum behaviors such as confinement, tunneling, electron-phonon scattering and electron-photon interactions. The large lattice mismatch...
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nanoHUB-U Fundamentals of Nanoelectronics B: Quantum Transport: Scientific Overview
Online Presentations | 11 Dec 2015 | Contributor(s):: Supriyo Datta
This video is the Scientific Overview for the nanoHUB-U course "Fundamentals of Nanoelectronics Part B: Quantum Transport" by Supriyo Datta.
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Lessons From Nanoelectronics
Online Presentations | 10 Dec 2015 | Contributor(s):: Supriyo Datta
This talk is about a less-appreciated by-product of the microelectronics revolution, namely the deeper understanding of current flow, energy exchange and device operation that it has enabled, which forms the basis for what we call the bottom-up approach.
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A Tutorial Introduction to Negative-Capacitor Landau Transistors: Perspectives on the Road Ahead
Online Presentations | 04 Dec 2015 | Contributor(s):: Muhammad A. Alam
In this talk, I use a simple graphical approach to demystify the device and explain why the experimental results are easy to misinterpret. Since the NC-FET is just a special case of a much broader class of phase-change devices and systems (e.g., transistors, memories, MEMS, logic-in-memory...
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GaN/InGaN/GaN Disk-in-Wire Light Emitters: Polar vs. Nonpolar Orientations
Online Presentations | 25 Nov 2015 | Contributor(s):: Rezaul Karim Nishat, S. Alqahtani, Ye Wu, Vinay Uday Chimalgi, Shaikh S. Ahmed
IWCE 2015 presentation. in this paper, we computationally evaluate and compare the performance of recently reported in0.75n/gan disk-in-wire light emitting diodes (led) grown in the polar (c-plane) and nonpolar (m-plane) crystallographic orientations in terms of built-in fields, electronic...
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Phonon Interactions in Single-Dopant-Based Transistors: Temperature and Size Dependence
Online Presentations | 25 Nov 2015 | Contributor(s):: Marc Bescond, Nicolas Cavassilas, Salim Berrada
IWCE 2015 presentation. in this work we investigate the dependence of electron-phonon scattering in single dopant-based nanowire transistor with respect to temperature and dimensions. we use a 3d real-space non-equilibrium green': ; s function (negf) approach where electron-phonon...
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Time-Resolved Computational Method for Atomistic Open System Simulations
Online Presentations | 13 Nov 2015 | Contributor(s):: Bozidar Novakovic, Gerhard Klimeck
IWCE 2015 presentation. Abstract and more information to be added at a later date.
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Mode Space Tight Binding Model for Ultra-Fast Simulations of III-V Nanowire MOSFETs and Heterojunction TFETs
Online Presentations | 13 Nov 2015 | Contributor(s):: Aryan Afzalian, Jun Huang, Hesameddin Ilatikhameneh, Santiago Alonso Perez Rubiano, Tillmann Christoph Kubis, Michael Povolotskyi, Gerhard Klimeck
IWCE 2015 presentation. we explore here the suitability of a mode space tight binding algorithm to various iii-v homo- and heterojunction nanowire devices. we show that in iii-v materials, the number of unphysical modes to eliminate is very high compared to the si case previously reported...
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Simulation of Organic Solar Cell with Graphene Transparent Electrode
Online Presentations | 13 Nov 2015 | Contributor(s):: Paolo Paletti, giacomo ulisse, Giuseppe Iannaccone, Gianluca Fiori
IWCE 2015 presentation. We present a simulation study of the performance of organic solar cell (OSC) exploiting graphene as transparent electrode. The approach is based on a multi-scale/multi-physics simulation framework, which is able to provide relevant information regarding the design...
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Unified View of Electron and Phonon Transport
Online Presentations | 10 Nov 2015 | Contributor(s):: Mark Lundstrom, Jesse Maassen
A simple, unified view of electron and phonon transport is presented. Similarities and differences are identified, and new insights that come from addressing phonon transport from an electron transport perspective will be discussed.
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Analyzing Variability in Short-Channel Quantum Transport from Atomistic First Principles
Online Presentations | 05 Nov 2015 | Contributor(s):: Qing Shi
IWCE 2015 invited presentation. Due to random impurity fluctuations, the device-to-device variability is a serious challenge to emerging nanoelectronics. In this talk I shall present a theoretical formalism and its numerical realization to predict quantum-transport variability from...
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Computational Methods for the Design of Bioinspired Systems that Employ Nanodevices
Online Presentations | 05 Nov 2015 | Contributor(s):: Damien Querlioz, Adrien F. Vincent
IWCE 2015 session keynote presentation. Biological systems compute by exploiting the rich physics of their natural “nanodevices”. In electronics, it is therefore attractive to design bioinspired computing paradigms, which exploit device physics more deeply than digital logic, in order...
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A Multi-Scale Modeling Approach to Study Transport in Silicon Heterojunction Solar Cells
Online Presentations | 03 Nov 2015 | Contributor(s):: Pradyumna Muralidharan, Dragica Vasileska, Stephen M. Goodnick, Stuart Bowden
IWCE 2015 presentation. Abstract and more information to be added at a later date.
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Multi-Scale Modeling of Metal-CNT Interfaces
Online Presentations | 03 Nov 2015 | Contributor(s):: Martin Claus
IWCE 2015 presentation. the authors studied the impact of contact materials on cntfet behavior using multiscale modeling and simulation framework. a strong correlation between metal-cnt coupling strength, contact length and contact resistance was found. the atomistic simulation was used to...
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From Single-Stage to Device-Level Simulation of Coupled Electron and Phonon Transport in Quantum Cascade Lasers
Online Presentations | 02 Nov 2015 | Contributor(s):: Irena Knezevic
IWCE 2015 presentation. Abstract and more information to be added at a later date.
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Multi-Scale Quantum Simulations of Conductive Bridging RAM
Online Presentations | 02 Nov 2015 | Contributor(s):: Michael Povolotskyi, nicolas onofrio, David M Guzman, Alejandro Strachan, Gerhard Klimeck
IWCE 2015 presentation.
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Green Light on Germanium
Online Presentations | 02 Nov 2015 | Contributor(s):: peide ye
This talk will review recent progress as well as challenges on Ge research for future logic applications with emphasis on the breakthrough work at Purdue University on Ge nFET which leads to the demonstration of the world first Ge CMOS circuits on Si substrates. Ge device technology includes...
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Inter-band Tunnel Transistors: Opportunities and Challenges
Online Presentations | 30 Oct 2015 | Contributor(s):: Suman Datta
In this talk, we will review progress in Tunnel FETs and also analyze primary roadblocks in the path towards achieving steep switching performance in III-V HTFET.