Resources (1-4 of 4)

1. Stanford 2D Semiconductor (S2DS) Transistor Model

   11 Aug 2018 | Compact Models | Contributor(s):

   By Saurabh Vinayak Suryavanshi¹, Eric Pop¹

   Stanford University

   The Stanford 2D Semiconductor (S2DS) model is a physics-based, compact model for field-effect transistors (FETs) based on two-dimensional (2D) semiconductors such as MoS2.

   https://nanohub.org/publications/18/?v=3

2. Stanford 2D Semiconductor Quasi-Ballistic Transistor Compact Model

   11 Aug 2018 | Compact Models | Contributor(s):

   By Saurabh Vinayak Suryavanshi¹, Eric Pop¹

   Stanford University

   The S2DSb compact model is based on MVS model and captures the quasi-ballistic transport in two-dimensional field effect transistors (2D FETs). It also includes a detailed device self-heating model...

   https://nanohub.org/publications/248/?v=1

3. Stanford 2D Semiconductor (S2DS) Transistor Model

   04 Apr 2016 | Compact Models | Contributor(s):

   By Saurabh Vinayak Suryavanshi¹, Eric Pop¹

   Stanford University

   The Stanford 2D Semiconductor (S2DS) model is a physics-based, compact model for field-effect transistors (FETs) based on two-dimensional (2D) semiconductors such as MoS2.

   https://nanohub.org/publications/18/?v=2

4. Stanford 2D Semiconductor (S2DS) Transistor Model

   22 Oct 2014 | Compact Models | Contributor(s):

   By Saurabh Vinayak Suryavanshi¹, Eric Pop¹

   Stanford University

   The Stanford 2D Semiconductor (S2DS) model is a physics-based, compact model for field-effect transistors (FETs) based on two-dimensional (2D) semiconductors such as MoS2.

   https://nanohub.org/publications/18/?v=1