Teaching Materials (1-7 of 7)

1. OMEN Nanowire: solve the challenge

   05 Feb 2011 | Contributor(s):: SungGeun Kim

   This document includes a challenging problems for OMEN Nanowire users. It challenges users to establish a nanowire transistor structure such that it satisfy the ITRS 2010 requirements.

2. Analytical and Numerical Solution of the Double Barrier Problem

   28 Jun 2010 | Contributor(s):: Gerhard Klimeck, Parijat Sengupta, Dragica Vasileska

   Tunneling is fully quantum-mechanical effect that does not have classical analog. Tunneling has revolutionized surface science by its utilization in scanning tunneling microscopes. In some device applications tunneling is required for the operation of the device (Resonant tunneling diodes,...

3. Illinois ECE 440: MOS Field-Effect Transistor Homework

   Teaching Materials | 28 Jan 2010 | Contributor(s):: Mohamed Mohamed

   This homework covers Output Characteristics and Mobility Model of MOSFETs.

4. MOSCap: First-Time User Guide

   Teaching Materials | 30 Mar 2009 | Contributor(s):: SungGeun Kim, Benjamin P Haley, Gerhard Klimeck

   This first-time user guide provides an introduction to MOSCap. The MOSCap tool simulates the one-dimensional (along the growth direction) electrostatics in typical single and dual-gate Metal-Oxide-Semiconductor device structures as a function of device size, geometry, oxide charge, temperature,...

5. MOSFET Exercise

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   Teaching Materials | 07 Jul 2008 | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

   With this exercise students are familiarized with the punchthrough effect, the series resistance at the source and drain region and the importance of impact ionization at high gate and drain bias conditions.www.eas.asu.edu/~vasileskNSF

6. MOSfet Homework Assignment - Role of Dielectric Constant and Thickness

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   Teaching Materials | 31 Jan 2008 | Contributor(s):: David K. Ferry

   Use the MOSfet tool on nanoHUB to simulate a n-channel MOSFET with the following parameters:Lsd=LG=45nm (each 15 nodes), oxide thickness of 1.2 nm (K=3.9, 5 nodes),poly-Si gate, junction depth of 10 nm (20 nodes), and all other parametersat their nominal preset values.Now, change K to 20,...

7. Semiconductor Device Education Material

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   Teaching Materials | 28 Jan 2008 | Contributor(s):: Gerhard Klimeck

   This page has moved to "a Wiki page format" When we hear the words, semiconductor device, we may think first of the transistors in PCs or video game consoles, but transistors are the basic component in all of the electronic devices we use in our daily lives. Electronic systems are...