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Thermal Transport in Layered Materials, Devices, and Systems
Online Presentations | 11 Apr 2024 | Contributor(s):: Eric Pop
The thermal properties of layered materials (like graphene and MoS2) are an active area of investigation, particularly due to their anisotropic and tunable thermal conductivity. We have studied their behavior as part of transistors, where self-heating is a major challenge for performance and...
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ABACUS Tool Suite and MOS Capacitors (Fall 2023)
Online Presentations | 19 Oct 2023 | Contributor(s):: Gerhard Klimeck
In the sixth session, Dr. Klimeck will give a brief overview of ABACUS and demonstrate the MOS Capacitor Lab. Students can experiment with the fundamental component of a MOSfet that is any computer chip
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ECE 606 L28.1: MOS Electrostatics and MOScap - Background
Online Presentations | 20 Jul 2023 | Contributor(s):: Gerhard Klimeck
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ECE 606 L28.2: MOScap - Band Diagram in Equilibrium and with Bias -->MOS cap
Online Presentations | 20 Jul 2023 | Contributor(s):: Gerhard Klimeck
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ECE 606 L28.3: MOScap - Qualitative Q-V Characteristics of MOS Capacitor
Online Presentations | 20 Jul 2023 | Contributor(s):: Gerhard Klimeck
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ECE 606 L28.4: MOScap - Induced Charges in Depletion and Inversion
Online Presentations | 20 Jul 2023 | Contributor(s):: Gerhard Klimeck
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ECE 606 L28.5: MOScap - Exact Solution of the Electrostatic Problem
Online Presentations | 20 Jul 2023 | Contributor(s):: Gerhard Klimeck
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ECE 606 L29.1: MOS Capacitor Signal Response - Introduction/Background
Online Presentations | 20 Jul 2023 | Contributor(s):: Gerhard Klimeck
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ECE 606 L29.2: MOS Capacitor Signal Response - Small Signal Response
Online Presentations | 20 Jul 2023 | Contributor(s):: Gerhard Klimeck
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ECE 606 L29.3: MOS Capacitor Signal Response - Large Signal Response
Online Presentations | 20 Jul 2023 | Contributor(s):: Gerhard Klimeck
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Ubuntu based Interactive tool for the simulation of the MOS electrostatics
Downloads | 26 Jun 2019 | Contributor(s):: Biswajeet Sahoo
This is a tool to simulate the MOS electrostatics. It includes the simulation of 2 terminal, 3 terminal and 4 terminal MOSFET. Everything is done for both nMOS and pMOS. This tool is designed to give users an interactive visual representation of how a MOSFET would work under...
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MOS Simulator
Tools | 25 Jun 2019 | Contributor(s):: Biswajeet Sahoo
National Institute of Technology,Rourkela. This is an Interactive tool for the simulation of the MOS electrostatics by varying the different parameters given in the sliders and input boxes
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ECE 695A Lecture 13R: Review Questions
Online Presentations | 19 Feb 2013 | Contributor(s):: Muhammad Alam
Review Questions:Both SiH and SiO are involved in HCI degradation. Give two evidences.Why doesn’t HCI occur during NBTI stress condition?I suggested that HCI curve can shifted horizontally to form a universal curve, do you believe that I can do a corresponding vertical shift to form the universal...
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ECE 606 Lecture 21: MOS Electrostatics
Online Presentations | 26 Nov 2012 | Contributor(s):: Gerhard Klimeck
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ECE 606 Lecture 22: MOScap Frequence Response/MOSFET I-V Characteristics
Online Presentations | 26 Nov 2012 | Contributor(s):: Gerhard Klimeck
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Uniform Methodology of Benchmarking Beyond-CMOS Devices
Online Presentations | 31 Oct 2012 | Contributor(s):: Dmitri Nikonov
Multiple logic devices are presently under study within the Nanoelectronic Research Initiative (NRI) to carry the development of integrated circuits beyond the CMOS roadmap. Structure and operational principles of these devices are described.Theories used for benchmarking these devices are...
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Nanoscale Transistors Lecture 4: MOS Electrostatics
Online Presentations | 19 Jul 2012 | Contributor(s):: Mark Lundstrom
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OMEN Nanowire: solve the challenge
Teaching Materials | 05 Feb 2011 | Contributor(s):: SungGeun Kim
This document includes a challenging problems for OMEN Nanowire users. It challenges users to establish a nanowire transistor structure such that it satisfy the ITRS 2010 requirements.
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Analytical and Numerical Solution of the Double Barrier Problem
Teaching Materials | 28 Jun 2010 | Contributor(s):: Gerhard Klimeck, Parijat Sengupta, Dragica Vasileska
Tunneling is fully quantum-mechanical effect that does not have classical analog. Tunneling has revolutionized surface science by its utilization in scanning tunneling microscopes. In some device applications tunneling is required for the operation of the device (Resonant tunneling diodes,...
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Illinois ECE 440 Solid State Electronic Devices, Lecture 33: MOS Capacitance
Online Presentations | 02 Mar 2010 | Contributor(s):: Eric Pop