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Md. Sajjad Alam
https://nanohub.org/members/194989
JFETIDG Model for Independent Dual-Gate JFETs
19 Jul 2017 | Compact Models | Contributor(s):
By Colin McAndrew1, Kejun Xia1
NXP Semiconductors
JFETIDG is a compact model for independent dual-gate JFETs. It is also applicable to: resistors with metal shields; the drift region of LDMOS transistors; the collector resistance of vertical...
https://nanohub.org/publications/173/?v=2
Nikolaos Makris
https://nanohub.org/members/160697
What can be flat band voltage for a double gate junction less device for p+ poly gate doped at 2 X 10^-14/cm2 and n-type silicon doped at 10^20/cm2?
Q&A|Closed | Responses: 0
https://nanohub.org/answers/question/1808