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05 Ferroelectric Devices for Compute-in-Memory: Array-Level Operations
Online Presentations | 18 Sep 2020 | Contributor(s):: Shimeng Yu, Panni Wang
Doped HfO2 based ferroelectric field-effect transistors (FeFETs) are being actively explored as emerging nonvolatile memory devices with the potential for compute-in-memory (CIM) paradigm. In this work, we explored the feasibility of array-level operations of FeFET in the context of in-situ...
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FeFET Memory Window Analytical Calculator
Downloads | 16 Dec 2019 | Contributor(s):: Nicolo Zagni, Paolo Pavan, Muhammad A. Alam
This code computes the Memory Window of a FeFET by using the Landau-Devonshire theory. The aim of this code is to illustrate: the derivation of the switching conditions the trends of MW scaling with ferroelectric thickness the design constraints to guarantee hysteresis the effect of...
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A Tutorial Introduction to Negative-Capacitor Landau Transistors: Perspectives on the Road Ahead
Online Presentations | 04 Dec 2015 | Contributor(s):: Muhammad A. Alam
In this talk, I use a simple graphical approach to demystify the device and explain why the experimental results are easy to misinterpret. Since the NC-FET is just a special case of a much broader class of phase-change devices and systems (e.g., transistors, memories, MEMS, logic-in-memory...