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IWCN 2021: Computational Research of CMOS Channel Material Benchmarking for Future Technology Nodes: Missions, Learnings, and Remaining Challenges
Online Presentations | 15 Jul 2021 | Contributor(s):: raseong kim, Uygar Avci, Ian Alexander Young
In this preentation, we review our journey of doing CMOS channel material benchmarking for future technology nodes. Through the comprehensive computational research for past several years, we have successfully projected the performance of various novel material CMOS based on rigorous physics...
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IWCN 2021: Ab initio Quantum Transport Simulation of Lateral Heterostructures Based on 2D Materials: Assessment of the Coupling Hamiltonians
Online Presentations | 14 Jul 2021 | Contributor(s):: Adel Mfoukh, Marco Pala
Lateral heterostructures based on lattice-matched 2D materials are a promising option to design efficient electron devices such as MOSFETs [1], tunnel-FETs [2] and energy-filtering FETs [3]. In order to rigorously describe the transport through such heterostructures, an ab-initio approach based...
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ECE 656 Lecture 3: Density of States
Online Presentations | 07 Sep 2011 | Contributor(s):: Mark Lundstrom
Outline:Density of statesExample: grapheneDiscussionSummary
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ECE 656 Lecture 4: Density of States - Density of Modes
Online Presentations | 14 Sep 2009 | Contributor(s):: Mark Lundstrom
Outline:Density of states Example: graphene Density of modes Example: graphene Summary
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ME 597 Lecture 2: Electron States in Solids-Density of States
Online Presentations | 09 Sep 2009 | Contributor(s):: Ron Reifenberger
Note: This lecture has been revised since its original presentation.Topics:Electron States in Solids – Bloch FunctionsKronig-Penney ModelDensity of States
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Illinois ECE 440 Solid State Electronic Devices, Lecture 6: Doping, Fermi Level, Density of States
Online Presentations | 04 Dec 2008 | Contributor(s):: Eric Pop, Umair Irfan
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Lecture 1A: What and where is the resistance?
Online Presentations | 20 Aug 2008 | Contributor(s):: Supriyo Datta
Objective: To introduce a simple quantitative model that highlights the essential parameters that determine electrical conduction: the density of states in the channel, D and the rates at which electrons hop in and out of the two contacts, labeled source and drain. This model is used to explain...
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Lecture 1B: What and where is the resistance?
Online Presentations | 20 Aug 2008 | Contributor(s):: Supriyo Datta
Objective: To introduce a simple quantitative model that highlights the essential parameters that determine electrical conduction: the density of states in the channel, D and the rates at which electrons hop in and out of the two contacts, labeled source and drain. This model is used to explain...