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  1. Runal Kumar Panja

    A vivid explorer of different dimensions of science!

    https://nanohub.org/members/365271

  2. How to use PMI Models in Sentaurus TCAD simulator?

    Q&A|Closed | Responses: 0

    Hello everyone.

    I am looking for a guide (detailed if possible) on how to use Physical Model Interface (PMI) user field in Sentaurus Sdevice.

    The specific problem is: how to...

    https://nanohub.org/answers/question/2332

  3. Dr Shammi Verma

    PhD(Physics)

    https://nanohub.org/members/204484

  4. Ali HOUADEF

    https://nanohub.org/members/200477

  5. Krishnakali Chaudhuri

    https://nanohub.org/members/70104

  6. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Characterization, Material/Process Dependence and Predictive Modeling

    Courses | 28 Mar 2012 | Contributor(s):: Souvik Mahapatra

    This is a presentation on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner SiON...

  7. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Fast and Ultra-fast Characterization Methods (Part 1 of 3)

    Online Presentations | 28 Mar 2012 | Contributor(s):: Souvik Mahapatra

  8. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Predictive Modeling (Part 3 of 3)

    Online Presentations | 28 Mar 2012 | Contributor(s):: Souvik Mahapatra

    This is a presentation on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner SiON...

  9. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: The Impact of Gate Insulator Processes (Part 2 of 3)

    Online Presentations | 28 Mar 2012 | Contributor(s):: Souvik Mahapatra

    This presentation is part 2 on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner...

  10. Thangadurai Paramasivam

    https://nanohub.org/members/60882

  11. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Characterization, Material/Process Dependence and Predictive Modeling (2011)

    Online Presentations | 11 May 2011 | Contributor(s):: Souvik Mahapatra

    This is a presentation on Negative Bias Temperature Instability, or in short NBTI, observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to...