CNTFET Lab

By Neophytos Neophytou1; Shaikh S. Ahmed2; POLIZZI ERIC3; Gerhard Klimeck4; Mark Lundstrom4

1. Technical University of Vienna 2. Southern Illinois University Carbondale 3. University of Massachusetts, Amherst 4. Purdue University

Simulates ballistic transport properties in 3D Carbon NanoTube Field Effect Transistor (CNTFET) devices

Launch Tool

You must login before you can run this tool.

Version 1.6.5 - published on 15 Oct 2019

doi:10.21981/WBMS-PX40 cite this

This tool is closed source.

View All Supporting Documents

Versions

Version Released DOI Handle Published
1.6.5 15 Oct 2019 doi:10.21981/WBMS-PX40 yes
1.6.4 24 Mar 2016 doi:10.4231/D3M90243W no
1.6.3 10 Sep 2015 doi:10.4231/D3222R70F no
1.6.2 11 Jun 2014 doi:10.4231/D3NC5SD2K no
1.6.1 26 Apr 2012 doi:10.4231/D32B8VB3H no
1.6 17 Jun 2011 doi:10.4231/D38K74W5V no
1.5 25 Mar 2010 doi:10.4231/D3ST7DW8P no
1.4 08 May 2008 doi:10.4231/D3BK16P2W no
1.3 21 Dec 2007 doi:10.4231/D3GB1XG6N no
1.2 11 Dec 2007 doi:10.4231/D3M32N90D no
1.1 03 Oct 2007 doi:10.4231/D3QV3C35Q no
1 10 Mar 2006 doi:10.4231/D3VM42W9F no