This exercise illustrates basic SCHRED capabilities for modeling MOS capacitors and also illustrates how the bound states distribution in energy changes with doping. The average distance of the carriers calculated semi-classically and quantum-mechanically is also examined since it is important parameter that contributes to the effective oxide thickness that determines the total gate capacitance and, therefore, the device transconductance.

NSF

Researchers should cite this work as follows:

• www.eas.asu.edu/~vasilesk

• Dragica Vasileska, Gerhard Klimeck (2008), "Schred: Exercise 1," https://nanohub.org/resources/4900.

  BibTex | EndNote

1. ABACUS
2. ACUTE
3. AQME
4. MOS capacitors
5. nanoelectronics
6. SCHRED