Essential Physics of the Ultimate MOSFET and the Next 20 Years of Semiconductor Technology
Category
Published on
Abstract
The MOSFET is basic component of the CMOS technology that enables the information age we live in today. Since the demonstration of the silicon MOSFET in 1959, engineers have made the channel lengths shorter and shorter in order to put more and more transistors on a chip. As channel lengths decreased from micrometers to nanometers, a deeper and deeper understanding of charge carrier transport under far from equilibrium conditions was needed. Modern nanoscale transistors operate differently than the micrometer scale transistors described in textbooks. The details are complicated, but the essential physics is not. My goal in this talk is to discuss the operation of these devices in a simple but physically sound way.
A broader goal of my talk is to discuss how semiconductor technology will meet the insatiable appetite that artificial intelligence has for more computing, more memory, and faster communication. I’ll do this in the context of the Chips and Science Act and the R&D programs that are just beginning to roll out.
Bio
Mark Lundstrom is the Don and Carol Scifres Distinguished Professor of Electrical and Computer Engineering at Purdue University. He earned his bachelor’s and master’s degrees from the University of Minnesota in 1973 and 1974, respectively and joined the Purdue faculty upon completing his doctorate on the West Lafayette campus in 1980. Before attending Purdue, he worked at Hewlett-Packard Corporation on NMOS process development and manufacturing. At Purdue, his research has explored solar cells, heterostructure devices, carrier transport physics, and the physics and technology of nanoscale devices. His current focus is on energy conversion devices such as solar cells and thermoelectric devices. In the 1990s, Lundstrom co-founded (with his colleagues, Nirav Kapadia and Jose Fortes, the PUNCH project, which provided online simulation services for research and education in micro and nanoelectronics. That work led to the NCN and nanoHUB.org, which now serves the nanotechnology community worldwide. He is the author of Fundamentals of Carrier Transport (2nd Ed., Cambridge, 2000) and Nanoscale Transistors: Device Physics, Modeling, and Simulation (Springer, 2005). Lundstrom is a fellow of the Institute of Electrical and Electronic Engineers (IEEE), the American Physical Society, and the American Association for the Advancement of Science (AAAS). He has received several awards for his teaching and research, and is a member of the U.S. National Academy of Engineering.
Sponsored by
Cite this work
Researchers should cite this work as follows:
Time
Location
112 Physics, Purdue University, West Lafayette, IN