ECE 606 L25.3: Bipolar Junction Transistor - Collector Doping Design (Kirk Effect, Base Pushout)

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  • (2023), "ECE 606 L25.3: Bipolar Junction Transistor - Collector Doping Design (Kirk Effect, Base Pushout)," https://nanohub.org/resources/37174.

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ECE 606 L25.3: Collector Doping Design (Kirk Effect, Base Pushout)
  • Section 25.3 Collector Doping Design (Kirk Effect, Base Pushout) 1. Section 25.3 Collector Doping … 0
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  • Section 25 Bipolar Junction Transistor – Design 2. Section 25 Bipolar Junction Tr… 9.80980980980981
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  • Collector Doping 3. Collector Doping 37.303970637303969
    00:00/00:00
  • … but (!) Kirk Effect and Base Pushout 4. … but (!) Kirk Effect and Ba… 176.30964297630965
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  • Kirk Effect and Base Pushout 5. Kirk Effect and Base Pushout 399.26593259926597
    00:00/00:00
  • Kirk Effect and Base Pushout 6. Kirk Effect and Base Pushout 456.42308975642311
    00:00/00:00
  • Section 25 Bipolar Junction Transistor – Design 7. Section 25 Bipolar Junction Tr… 548.314981648315
    00:00/00:00
  • Section 25 Bipolar Junction Transistor – Design 8. Section 25 Bipolar Junction Tr… 553.92058725392064
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