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Compact Solver for Double-Gate Tunnel-FETs
Plotting of DC and AC characteristics of DG-Tunnel-FETs using equations of the corresponding Verilog-A compact model THM-TFET.
Launch Tool
Archive Version 1.0
Published on 29 Mar 2021
Latest version: 1.1. All versions
doi:10.21981/Z76A-SQ79 cite this
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Abstract
This tool allows plotting of DC and AC characteristics of a double-gate Tunnel-FET using the equations of the corresponding Verilog-A compact model THM-TFET. The compact model allows the user to simulate circuits with Tunnel-FETs in DC, AC or transient mode using a conventional circuit simulator. This tool supports the use of the compact model, allows a rapid simulation of the characteristics of single Tunnel-FET devices, and gives deeper insight to the device physics.
The tool and the corresponding Verilog-A compact model THM-TFET was developed by Device Modeling Research Group of NanoP, THM University of Applied Sciences, Germany.
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The tool was developed by Device Modeling Research Group of NanoP, THM University of Applied Sciences, Germany.
Credits
Michael Graef, developer of the fundamental analytical modeling approach, which the compact model is based upon.
Sponsored by
Project funding: German Federal Ministry of Education and Research (BMBF), project no. FKZ 13FH010IX5
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