Moore’s Law Extension and Beyond

By Peide "Peter" Ye

Electrical and Computer Engineering, Purdue University, West Lafayette, IN

Published on

Abstract

2018 Arden L. Bement Jr. Award Presentation

Moore’s Law became the “golden rule” for the microelectronics industry and a springboard for innovation. Gordon Moore paved the path for Intel and others to make faster, smaller and more affordable transistors for our modern tools and toys.

In his talk, Ye will review his research efforts at Purdue on materials, structures and device architecture to support the microelectronic industry and extend Moore’s Law. The goal of the research is that it will lead to smarter, ubiquitous computing technology and keep us healthier, safer and more productive.

Bio

Peide Ye Peide Ye is the Richard J. and Mary Jo Schwartz Professor of Electrical and Computer Engineering in the College of Engineering. He received his Bachelor of Science in electrical engineering in 1988 from Fudan University, Shanghai, China. Ye earned his PhD in condensed matter physics in 1996 from Max Planck Institute for Solid State Research in Stuttgart, Germany.

After working for NTT Basic Research Laboratories, the National High Magnetic Field Laboratory and Princeton University, and Bell Labs/Lucent Technologies/ Agere Systems, Ye joined Purdue in 2005 as an associate professor. He became a full professor in 2010 and a named professor in 2016.

His current research includes atomic semiconductor and physics devices, nanostructures and nanofabrications among other areas. Ye’s work in semiconductor technologies is recognized nationally and internationally, and he has been credited with a series of research breakthroughs. Each one was significant enough to be deemed “field-defining.”

Ye has authored and co-authored eight book chapters, more than 200 peer-reviewed articles and made 350 conference presentations, including many invited, keynote and plenary talks. He has been awarded five U.S. patents.

Ye has been the recipient of the Volkswagen Fellowship, the Max Planck Society Fellowship, the NTT Fellowship, the IBM Faculty Award, the Purdue College of Engineering Faculty Award of Excellence in Research and the Sigma Xi Research Award. He is a fellow of the Institute of Electrical and Electronics Engineers and the American Physical Society.

Sponsored by

Cite this work

Researchers should cite this work as follows:

  • Peide "Peter" Ye (2018), "Moore’s Law Extension and Beyond," https://nanohub.org/resources/29193.

    BibTex | EndNote

Time

Location

Fowler Hall, Stewart Center, Purdue University, Lafayette, IN

Tags

Moore’s Law Extension and Beyond
  • Moore's Law Extension and Beyond 1. Moore's Law Extension and Beyo… 0
    00:00/00:00
  • Acknowledgement 2. Acknowledgement 408.34167500834167
    00:00/00:00
  • Acknowledgement 3. Acknowledgement 537.50417083750415
    00:00/00:00
  • Outline 4. Outline 577.877877877878
    00:00/00:00
  • History of Computation 5. History of Computation 603.90390390390394
    00:00/00:00
  • Moore's Law in Microelectronics 6. Moore's Law in Microelectronic… 663.19652986319659
    00:00/00:00
  • Power, Power, Power ! 7. Power, Power, Power ! 829.12912912912918
    00:00/00:00
  • Research on Moore's Law Extension 8. Research on Moore's Law Extens… 910.643977310644
    00:00/00:00
  • Why III-V MOSFET for Logic Applications 9. Why III-V MOSFET for Logic App… 1087.354020687354
    00:00/00:00
  • Oxide layer formation on GaAs 10. Oxide layer formation on GaAs 1354.8214881548215
    00:00/00:00
  • Ex-situ ALD high-k on III-V substrates 11. Ex-situ ALD high-k on III-V su… 1436.6366366366367
    00:00/00:00
  • ALD Al2O3 Process with TMA and H2O 12. ALD Al2O3 Process with TMA and… 1526.3263263263264
    00:00/00:00
  • Highest ID in GaAs MOSFET enabled by ALD 13. Highest ID in GaAs MOSFET enab… 1645.1117784451119
    00:00/00:00
  • First GaAs CMOS Inverter 14. First GaAs CMOS Inverter 1712.1788455121789
    00:00/00:00
  • First GaAs CMOS based circuitry 15. First GaAs CMOS based circuitr… 1745.3119786453121
    00:00/00:00
  • First GaAs CMOS 5-Stage Ring-Oscillator 16. First GaAs CMOS 5-Stage Ring-O… 1752.1521521521522
    00:00/00:00
  • Research on Moore's Law Extension 17. Research on Moore's Law Extens… 1801.901901901902
    00:00/00:00
  • 3D Transistors improve electrostatic control of the channel 18. 3D Transistors improve electro… 1826.3596930263598
    00:00/00:00
  • The First Transistor is on Ge (made at Purdue) 19. The First Transistor is on Ge … 1990.3236569903238
    00:00/00:00
  • Advanced Gate Structures (Gate-all-around) 20. Advanced Gate Structures (Gate… 2098.7320653987322
    00:00/00:00
  • First Ge CMOS Circuits with 3D Structures 21. First Ge CMOS Circuits with 3D… 2151.6516516516517
    00:00/00:00
  • Advanced Gate Structures 22. Advanced Gate Structures 2281.2479145812481
    00:00/00:00
  • Research on Moore's Law Extension 23. Research on Moore's Law Extens… 2329.9632966299632
    00:00/00:00
  • Steep-slope Switches for Low-power Applications 24. Steep-slope Switches for Low-p… 2362.862862862863
    00:00/00:00
  • Steep-slope 2D NC-FETs 25. Steep-slope 2D NC-FETs 2468.0347013680348
    00:00/00:00
  • Steep-slope MoS2 NC-FETs with HZO as Gate Dielectric: DC Electrical Characterization 26. Steep-slope MoS2 NC-FETs with … 2632.732732732733
    00:00/00:00
  • Negative DIBL and Negative Differential Resistance 27. Negative DIBL and Negative Dif… 2735.1351351351354
    00:00/00:00
  • Conclusions 28. Conclusions 2785.251918585252
    00:00/00:00
  • There are many rooms in-between 29. There are many rooms in-betwee… 2988.3883883883886
    00:00/00:00