Wide and Ultra-Wide Bandgap Semiconductors for Optoelectronics and Electronics
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Abstract
III-nitride (Al, Ga, In, -N) semiconductors and heterostructures have significantly advanced device technologies in electronics and optoelectronics, especially for high-power, high-speed electronics, and UV/visible light-emitting diodes and semiconductor lasers. II-IV-nitrides are derived conceptually from the III-nitrides by replacing each of two group III atoms by a pair of group II and group IV atoms. Expanding the nitride family to include the II-IV-nitride compounds opens new possibilities for band structure and device engineering that is unachievable from pure III-nitride heterostructures. In this talk, novel heterostructures using closely-lattice matched GaN/ZnGeN2 will be presented with two examples: (i) a novel type-II quantum well design based on InGaN/ZnGeN2 heterostructures for high efficiency light emitter devices; and (ii) a coupled quantum well design based on GaN/ZnGeN2 heterostructures for intersubband transitions for quantum cascade laser application.
Recently, gallium oxide (Ga2O3) as a semiconductor material has attracted lots of interests due to its large bandgap (4.6-4.9 eV), promising for high power electronics and short wavelength optoelectronics. Our efforts on both homoepitaxy and heteroepitaxy of β-Ga2O3 via low pressure chemical vapor deposition method will be discussed. In addition, the synthesis of nanostructures/nanomaterials for sensing and mechanical device applications will be presented.
Bio
Hongping Zhao is an associate professor in the Department of Electrical and Computer Engineering, and the Department of Materials Science and Engineering at The Ohio State University. Prior this, Zhao was an Assistant Professor in the Department of Electrical Engineering and Computer Science at Case Western Reserve University. She received her PhD in Electrical Engineering from Lehigh University. Her research interests lie in the area of wide bandgap and ultra-wide bandgap semiconductor materials and devices. Her current research focuses on the material synthesis and device physics of III-nitrides, II-IV-nitrides, Ga2O3, ZnO and etc. Zhao has published more than 54 refereed journal and 90 refereed conference papers. She serves as an editorial board member of the journal Optics since 2013. She is currently serving as the technical program committee for CLEO, and the invited organizer for EMC.
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