Ultra-high purity aluminum gallium arsenide (AlGaAs)-gallium arsenide (GaAs) heterostructures grown by molecular beam epitaxy (MBE) that host a two-dimensional electron gas (2DEG) are a rich environment for the study of fundamental condensed matter physics and may have applications for quantum computing. I will detail research and investigation into critical equipment and materials engineering issues related to the quality of the fabricated 2DEG systems. I also will present data that demonstrates the critical role gallium purity plays in 2DEG mobility.

Geoff Gardner received his B.S. and M.S. degrees from Purdue University in Physics with a minor in Electrical and Computer Engineering.  He has held various engineering positions at the Purdue Applied Physics Laboratory and Birck Nanotechnology Center over the past 12 years and currently is a Senior Research Associate for Station Q Purdue.  He has been working closely with Professor Michael Manfra, the Bill and Dee O'Brien Chair Professor of Physics and Astronomy and director of Station Q Purdue, since 2010.

Researchers should cite this work as follows:

• Geoff Gardner (2017), "Equipment, Techniques, and Growth of Ultra-High Purity AlGaAs-GaAs Heterostructures by Molecular Beam Epitaxy," https://nanohub.org/resources/26615.

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1. 2deg
2. AlGaAs
3. GaAs
4. materials science
5. mbe
6. quantum computing