Basics of Compact Model Development

By Sivakumar P Mudanai

Intel Corporation, Santa Clara, CA

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Abstract

This tutorial is aimed at developing an understanding of what a compact model is, the need and role of compact models in the semiconductor industry and the requirements that a compact model must meet for acceptable use in circuit simulations. The tutorial will use simple examples from planar MOSFET compact models for illustration.

Sponsored by

NEEDS; Nano-Engineered Electronic Device Simulation Node

Cite this work

Researchers should cite this work as follows:

  • Sivakumar P Mudanai (2014), "Basics of Compact Model Development," https://nanohub.org/resources/21367.

    BibTex | EndNote

Time

Location

University of California Berkeley, Berkeley, CA

Tags

  1. Circuit Simulation
  2. Compact Model
  3. MOSFET
  4. nanotransistors
  5. NCN Transistor @ 75
  6. transistors
  7. tutorial
Basics of Compact Model Development
  • Introduction to compact modeling 1. Introduction to compact modeli… 0
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  • Outline 2. Outline 150.01668335001668
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  • What is a compact model 3. What is a compact model 235.53553553553556
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  • Two worlds 4. Two worlds 297.76443109776443
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  • Connecting the two worlds 5. Connecting the two worlds 358.39172505839173
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  • Toy compact model: Examination 6. Toy compact model: Examination 403.33667000333668
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  • A simplified view of circuit simulation 7. A simplified view of circuit s… 481.64831498164835
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  • Model file characterization 8. Model file characterization 552.419085752419
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  • Compact modeling requirements: I 9. Compact modeling requirements:… 672.00533867200534
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  • Problems with unphysical models 10. Problems with unphysical model… 830.23023023023029
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  • Compact model requirement:II 11. Compact model requirement:II 1074.0073406740073
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  • Compact model requirement: III 12. Compact model requirement: III 1159.325992659326
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  • The compact model challenge 13. The compact model challenge 1546.7467467467468
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  • Striking the right balance 14. Striking the right balance 1963.5635635635636
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  • Developer skill requirements 15. Developer skill requirements 2000.5672339005673
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  • Types of compact models 16. Types of compact models 2228.828828828829
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  • Building the core compact model: Planar MOSFET 17. Building the core compact mode… 2335.0684017350686
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  • Solving for s 18. Solving for s 2438.9389389389389
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  • fs Approaches 19. fs Approaches 2485.6856856856857
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  • Analytical modeling approaches 20. Analytical modeling approaches 2659.2258925592259
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  • Basic MOSFET Model Equations 21. Basic MOSFET Model Equations 2699.4994994994995
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  • Compact modeling of Qinv and Qbody 22. Compact modeling of Qinv and Q… 2761.0276943610279
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  • Basic MOSFET Model Equations 23. Basic MOSFET Model Equations 2883.7837837837837
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  • Channel current 24. Channel current 2891.6916916916916
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  • Charge modeling 25. Charge modeling 2959.4260927594264
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  • Charge modeling 26. Charge modeling 3030.13013013013
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  • Compact modeling of bulk charge 27. Compact modeling of bulk charg… 3156.9235902569235
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  • Linearized inversion charge and current 28. Linearized inversion charge an… 3174.3410076743412
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  • Gummel symmetry 29. Gummel symmetry 3268.068068068068
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  • Distortion prediction 30. Distortion prediction 3371.2712712712714
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  • Other effects 31. Other effects 3670.5705705705709
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  • Compact modeling of SCE 32. Compact modeling of SCE 3737.1705038371706
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  • Modeling velocity saturation 33. Modeling velocity saturation 3876.1761761761763
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  • Modeling velocity saturation 34. Modeling velocity saturation 3926.0927594260929
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  • Gain compression and distortion 35. Gain compression and distortio… 3986.052719386053
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  • Mobility Modeling: field dependence 36. Mobility Modeling: field depen… 4160.460460460461
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  • Mobility Modeling: gate field dependence 37. Mobility Modeling: gate field … 4262.2622622622621
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  • Non-uniform doping 38. Non-uniform doping 4300
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  • Reverse short channel effect 39. Reverse short channel effect 4506.9069069069074
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  • Reverse short channel effect 40. Reverse short channel effect 4515.3153153153153
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  • Long channel DIBL modeling 41. Long channel DIBL modeling 4655.622288955622
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  • Non Quasi-Static Effects 42. Non Quasi-Static Effects 4770.2702702702709
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  • Small-Signal NQS Compact Model 43. Small-Signal NQS Compact Model 4845.8124791458131
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  • Noise Characteristics 44. Noise Characteristics 5010.043376710044
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  • Noise sources and modeling 45. Noise sources and modeling 5076.3430096763432
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  • Noise sources and modeling 46. Noise sources and modeling 5110.3770437103776
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  • Other models… Important nonetheless 47. Other models… Important none… 5157.9579579579586
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  • Core compact models for recent devices 48. Core compact models for recent… 5194.394394394395
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  • Double gate FET 49. Double gate FET 5209.1758425091757
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  • Poisson equation for a Double gate MOSFET 50. Poisson equation for a Double … 5227.3606940273612
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  • Modeling Double gate transistors 51. Modeling Double gate transisto… 5262.1287954621293
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  • Multi gate model 52. Multi gate model 5292.1588254921589
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  • Low effective mass device modeling 53. Low effective mass device mode… 5318.3850517183855
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  • Low effective mass device modeling -I 54. Low effective mass device mode… 5461.0276943610279
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  • Low effective mass device modeling -II 55. Low effective mass device mode… 5563.73039706373
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  • Modeling MRAM devices 56. Modeling MRAM devices 5674.307640974308
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  • Option 1: equivalent circuit models 57. Option 1: equivalent circuit m… 5744.5445445445448
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  • Option 2: Physical model 58. Option 2: Physical model 5824.5912579245914
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  • Good compact modeling practices - I 59. Good compact modeling practice… 5914.8148148148148
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  • Good compact modeling practices -II 60. Good compact modeling practice… 6072.6059392726065
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  • Good compact modeling practices -III 61. Good compact modeling practice… 6256.1227894561234
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  • Good compact modeling practices -IV 62. Good compact modeling practice… 6330.2635969302637
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  • Summary 63. Summary 6383.04971638305
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  • Acknowledgements 64. Acknowledgements 6447.3807140473809
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