Assessing the MVS Model for Nanotransistors

By Siyang Liu1; Xingshu Sun1; Mark Lundstrom1

1. Purdue University

Download (PDF)

Licensed under Creative Commons.

Category

Presentation Materials

Published on

Abstract

The MIT Virtual Source model [1] is a recently developed compact model for nanoscale transistor. It is a semi-empirical model based on the physics of electron transport at nanoscale. The model requires only a few input parameters, most of which can be obtained from experimental data. This model produces an accurate result as well as maintains simplicity.

References

[1] A. Khakifirooz, O. M. Nayfeh, and D. Antoniadis, "A Simple Semiempirical Short-Channel MOSFET Current-Voltage Model Continuous Across All Regions of Operation and Employing Only Physical Parameters," Electron Devices, IEEE Transactions on, vol. 56, pp. 1674-1680, 2009.
[2] L. Xin, W. Weimin, A. Jha, G. Gildenblat, R. van Langevelde, G. D. J. Smit, et al., "Benchmark Tests for MOSFET Compact Models With Application to the PSP Model," Electron Devices, IEEE Transactions on, vol. 56, pp. 243-251, 2009.

Cite this work

Researchers should cite this work as follows:

  • Siyang Liu, Xingshu Sun, Mark Lundstrom (2014), "Assessing the MVS Model for Nanotransistors," https://nanohub.org/resources/20712.

    BibTex | EndNote