The Road Ahead for Carbon Nanotube Transistors

By Aaron Franklin

IBM T. J. Watson Research Center

Published on

Abstract

Single-walled carbon nanotubes (CNTs) are among the most researched materials in the world. One of the foremost potential applications for CNTs is as the channel for next-generation transistors. While some of the CNT field-effect transistor (CNTFET) research community gave way to the rise of another carbon allotrope—graphene—in the mid-2000s, progress in the CNTFET field did not stop. In fact, in recent years the benefits of CNTFETs in a digital technology have become more evident and accessible; from the recent validation that a sub-10 nm CNT channel outperforms the best silicon competition to demonstrations of CNTFET circuits, including those on flexible and/or transparent substrates, with operating voltages as low as 0.4 V. In this talk, recent advancements in the nanotube transistor field will be reviewed, showing why CNTFETs are worth considering now more than ever. Then, the material- and device-related challenges to realizing a nanotube-driven digital technology will be covered. By discussing the remaining obstacles and presenting recent progress toward addressing them, it is hoped that those in attendance may develop new ideas to contribute to overcoming these hurdles. Important considerations for next generation transistors from other materials will also be reviewed, revealing how different the road ahead is from the past. Overall, this talk should provide a reasonable overview of the CNT transistor field—where it has been, where it may go, and why more people should be along for the ride.

Bio

Aaron Franklin Aaron Franklin received his Ph.D. from Purdue University in 2008 and his B.S.E. degree from Arizona State University in 2004, both in electrical engineering. Since 2009, he has been a Research Staff Member at IBM's T. J. Watson Research Center working in the area of low-dimensional nanoelectronics. His research focuses on the integration of nanomaterials into electronic devices, including high-performance transistors, thin-film transistors, supercapacitors, and photovoltaic cells. His Ph.D. research at Purdue was funded by a National Science Foundation Graduate Research Fellowship. Before beginning his graduate studies, Aaron worked as a Component Design Engineer for Intel Corporation.

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Cite this work

Researchers should cite this work as follows:

  • Aaron Franklin (2013), "The Road Ahead for Carbon Nanotube Transistors," https://nanohub.org/resources/18867.

    BibTex | EndNote

Time

Location

Birck Nanotechnology Building, Room 2001, Purdue University, West Lafayette, IN

Tags

The Road Ahead for Carbon Nanotube Transistors
  • The Road Ahead for Carbon Nanotube Transistors 1. The Road Ahead for Carbon Nano… 0
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  • Outline 2. Outline 228.39506172839506
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  • IBM—Where does research fit in? 3. IBM—Where does research fit … 236.36970303636971
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  • Disciplines within IBM Research 4. Disciplines within IBM Researc… 313.17984651317988
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  • Technology Innovation Pipeline 5. Technology Innovation Pipeline 349.04904904904907
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  • Where is the transistor industry headed? 6. Where is the transistor indust… 402.90290290290289
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  • What's so difficult?! 7. What's so difficult?! 517.18385051718383
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  • The Road Ahead: Power Constrained Scaling 8. The Road Ahead: Power Constrai… 586.31965298631962
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  • The Road Ahead: Power Constrained Scaling 9. The Road Ahead: Power Constrai… 681.54821488154823
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  • What is the perfect transistor material? 10. What is the perfect transistor… 847.21388054721388
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  • Why CNTs to replace Si? 11. Why CNTs to replace Si? 963.93059726393062
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  • Focus application areas by publication count 12. Focus application areas by pub… 995.69569569569569
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  • CNTs vs. graphene 13. CNTs vs. graphene 1081.6816816816818
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  • 14. "Are we there yet!?" 1147.5141808475141
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  • How CNTFETs work 15. How CNTFETs work 1297.4974974974975
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  • How CNTFETs work 16. How CNTFETs work 1423.9906573239907
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  • Outline 17. Outline 1483.7837837837838
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  • Transistor scaling 18. Transistor scaling 1491.0577243910577
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  • CNT transistor device structure 19. CNT transistor device structur… 1592.9262595929263
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  • Characterizing channel length 20. Characterizing channel length 1625.3253253253254
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  • Performance of sub-10 nm CNTFET 21. Performance of sub-10 nm CNTFE… 1653.8872205538874
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  • Comparison with Si-based devices 22. Comparison with Si-based devic… 1699.7330663997332
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  • Comparison with Si-based devices 23. Comparison with Si-based devic… 1753.3533533533534
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  • Outline 24. Outline 1889.1891891891892
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  • Separation of semiconducting CNTs 25. Separation of semiconducting C… 1906.3396730063398
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  • Separation of semiconducting CNTs 26. Separation of semiconducting C… 1952.3857190523859
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  • Separation of semiconducting CNTs 27. Separation of semiconducting C… 1990.156823490157
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  • Separation of semiconducting CNTs 28. Separation of semiconducting C… 2070.6373039706373
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  • Precise placement of CNTs 29. Precise placement of CNTs 2131.1978645311979
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  • Precise placement of CNTs 30. Precise placement of CNTs 2161.7283950617284
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  • Precise placement of CNTs 31. Precise placement of CNTs 2218.4851518184851
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  • Outline 32. Outline 2342.475809142476
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  • Variability 33. Variability 2369.1024357691026
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  • Variability 34. Variability 2464.9983316649982
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  • Variability 35. Variability 2497.997997997998
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  • Variability 36. Variability 2558.7253920587254
    00:00/00:00
  • N-type CNTFET (NFET) 37. N-type CNTFET (NFET) 2610.1101101101103
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  • N-type CNTFET (NFET) 38. N-type CNTFET (NFET) 2693.0930930930931
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  • N-type CNTFET (NFET) 39. N-type CNTFET (NFET) 2785.2185518852189
    00:00/00:00
  • N-type CNTFET (NFET) 40. N-type CNTFET (NFET) 2795.895895895896
    00:00/00:00
  • Contact scaling 41. Contact scaling 2868.068068068068
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  • Contact scaling 42. Contact scaling 2924.9249249249251
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  • Contact scaling 43. Contact scaling 3003.5035035035035
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  • Self-aligned gate 44. Self-aligned gate 3044.3443443443443
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  • Self-aligned gate 45. Self-aligned gate 3068.068068068068
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  • Self-aligned gate 46. Self-aligned gate 3216.2829496162831
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  • Self-aligned gate 47. Self-aligned gate 3239.6730063396731
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  • Side comment 48. Side comment 3280.3470136803471
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  • Self-aligned gate 49. Self-aligned gate 3346.1795128461795
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  • Outline 50. Outline 3349.2158825492161
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  • 51. "Next-Generation" transistors 3351.3847180513849
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  • 52. "Next-Generation" transistors 3409.9432766099435
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  • Replacing Si compared to kitchen remodel 53. Replacing Si compared to kitch… 3413.646980313647
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  • Creating NEW functional technology 54. Creating NEW functional techno… 3520.3536870203538
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  • Can we ever reach the target purity and placement density?? 55. Can we ever reach the target p… 3541.0410410410414
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  • Summary 56. Summary 3639.3393393393394
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  • Many thanks to… 57. Many thanks to… 3651.8518518518522
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