Nanoscale Transistors Lecture 2: IV Characteristics - traditional approach

By Mark Lundstrom

Electrical and Computer Engineering, Purdue University, West Lafayette, IN

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Researchers should cite this work as follows:

  • Mark Lundstrom (2012), "Nanoscale Transistors Lecture 2: IV Characteristics - traditional approach," https://nanohub.org/resources/14761.

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Burton Morgan, Rm 121, Purdue University, West Lafayette, IN

Tags

  1. bottom up approach
  2. I-V curves/characteristics
  3. nanoelectronics
  4. nanotransistors
Nanoscale Transistors Lecture 2: IV Characteristics - traditional approach
  • Lecture 2: IV Characteristics: traditional approach 1. Lecture 2: IV Characteristics:… 0
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  • MOSFET IV characteristic 2. MOSFET IV characteristic 52.133333333333333
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  • MOSFET IV 3. MOSFET IV 101.43333333333334
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  • MOSFET IV: low VDS 4. MOSFET IV: low VDS 261.6
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  • MOSFET IV: 5. MOSFET IV: "pinch-off" at high… 372.23333333333335
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  • MOSFET IV: high VDS 6. MOSFET IV: high VDS 545.16666666666663
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  • velocity saturation 7. velocity saturation 760
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  • MOSFET IV: velocity saturation 8. MOSFET IV: velocity saturation 839.26666666666665
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  • MOSFET: IV (re-cap) 9. MOSFET: IV (re-cap) 888.73333333333335
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  • 2-piece model for ID(VG, VD) 10. 2-piece model for ID(VG, VD) 957.06666666666672
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  • model for ID(VG, VD) 11. model for ID(VG, VD) 1001.1666666666666
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  • model for ID(VG, VD) 12. model for ID(VG, VD) 1046.9333333333334
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  • empirical model for ID(VG, VD) 13. empirical model for ID(VG, VD) 1067.2333333333334
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  • understanding the saturating function: FSAT(VD) 14. understanding the saturating f… 1157.6333333333334
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  • saturating function: FSAT(VD) 15. saturating function: FSAT(VD) 1211.7666666666667
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  • level 0 16. level 0 "Virtual Source model" 1224.0333333333333
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  • discussion 17. discussion 1302.8
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  • goals 18. goals 1353.7
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  • references 19. references 1380.0333333333333
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