Stanford University Resistive-Switching Random Access Memory (RRAM) Verilog-A Model 1.0.0

By Zizhen Jiang1, H.-S. Philip Wong1

Stanford University

The Stanford University RRAM Model is a SPICE-compatible compact model which describes switching performance for bipolar metal oxide RRAM.

Listed in Compact Models | publication by group NEEDS: New Era Electronic Devices and Systems

Additional materials available

Version 1.0.0 - published on 23 Oct 2014 doi:10.4231/D37H1DN48 - cite this

Licensed under NEEDS Modified CMC License according to these terms

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