Stanford University Resistive-Switching Random Access Memory (RRAM) Verilog-A Model 1.0.0
The Stanford University RRAM Model is a SPICE-compatible compact model which describes switching performance for bipolar metal oxide RRAM.
Listed in Compact Models | publication by group NEEDS: New Era Electronic Devices and Systems
Additional materials available
Version 1.0.0 - published on 23 Oct 2014 doi:10.4231/D37H1DN48 - cite this
Licensed under NEEDS Modified CMC License according to these terms
Supporting Docs
Stanford University Resistive-Switching Random Access Memory (RRAM) Verilog-A Model 1.0.0 Verilog-A(VA | 7 KB)
Stanford University Resistive-Switching Random Access Memory (RRAM) Verilog-A Model 1.0.0 HSPICE Netlists(ZIP | 925 KB)
Stanford University Resistive-Switching Random Access Memory (RRAM) Verilog-A Model 1.0.0 Manual(PDF | 1 MB)
NEEDS: New Era Electronic Devices and Systems
This publication belongs to the NEEDS: New Era Electronic Devices and Systems group.