Nanosheet FET
24 May 2023 | Contributor(s): Jing Guo, Ning Yang, Qimao Yang
Simulate Nanosheet FET and FinFET based on Quantum Transport
Power Diode Lab
21 Nov 2022 | Contributor(s): Jing Guo, Ning Yang
Calculate the critical breakdown electric field, break down voltage, depletion region thickness, and specific on resistance of power diodes.
2D Material Carrier Concentration Lab
15 Nov 2022 | Contributor(s): Jing Guo, Ning Yang
Simulate density of states, carrier statistics, and carrier concentrations in two-dimensional semiconductors and graphene
2DFET
18 Feb 2021 | Contributor(s): Ning Yang, Tong Wu, Jing Guo
Calculate the I-V characteristics of field-effect transistors (FETs) based on monolayer two-dimensional (2D) materials.
Spin Quantum Gate Lab
26 Apr 2019 | Contributor(s): Tong Wu, Qimao Yang, Daniel Volya, Jing Guo
Simulate the device-level characteristics of spin-based quantum gates.
CNTbands
Tools | 14 Dec 2006 | Contributor(s): Gyungseon Seol, Youngki Yoon, James K Fodor, Jing Guo, Akira Matsudaira, Diego Kienle, Gengchiau Liang, Gerhard Klimeck, Mark Lundstrom, Ahmed Ibrahim Saeed
This tool simulates E-k and DOS of CNTs and graphene nanoribbons.
FETToy
Tools | 14 Feb 2006 | Contributor(s): Anisur Rahman, Jing Wang, Jing Guo, Md. Sayed Hasan, Yang Liu, Akira Matsudaira, Shaikh S. Ahmed, Supriyo Datta, Mark Lundstrom
Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs
CNT_bands
Tools | 09 Sep 2005 | Contributor(s): Jing Guo, Akira Matsudaira
Computes E(k) and the density-of-states (DOS) vs. energy for a carbon nanotube