DRC202 Device Research Conference Technical Presentations
Series | 14 Oct 2020 | Contributor(s): Siddharth Rajan (editor), Zhihong Chen (editor), Becky (R. L.) Peterson
For over seven decades, the Device Research Conference (DRC) has brought together leading scientists, researchers and students to share their latest discoveries in device science, technology and modeling. Notably, many of the first public disclosures of key device technologies were made at the...
47 Electrostatic Engineering in BaTiO3/β-Ga2O3 Heterostructure Field Effect Transistors
Online Presentations | 14 Oct 2020 | Contributor(s): Nidhin Kurian Kalarickal, Zhanbo Xia, Wyatt Moore, Joe McGlone, Aaron R. Arehart, Steven A. Ringel, Siddharth Rajan
We report on the design and demonstration of BaTiO3/β-Ga2O3 based lateral field effect transistors with superior breakdown performance. Utilizing the high-k low-k dielectric interface allows significant improvement in electrostatic field management giving a breakdown voltage of 1.1 KV at 5...
09 Demonstration of Vertical GaN PN Diode with Step-etched Triple zone JTE
Online Presentations | 14 Oct 2020 | Contributor(s): Hyun-Soo Lee, Yuxuan Zhang, Zhaoying Chen, Mohammad Wahidur Rahman, Hongping Zhao, Siddharth Rajan
We have demonstrated significantly improved BV of vertical GaN PN diode with STJTE without any degradation of forward characteristics. This is the first demonstration of a step-etched multiple zone edge termination for III-Nitride technology.
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