nanoHUB.org - Questions and Answers: Can nanoMOS simulate a tunneling transistor?

Please be advised that the date of scheduled maintenance has been changed to Monday, June 17, 2024 beginning at approximately 8 am PDT/11 am EDT. Expect a minimum downtime of approximately 4 hours, barring any difficulties. All running tool sessions will expire during the maintenance window, please plan accordingly. We apologize for any inconvenience.

Home › Questions and Answers › Can nanoMOS simulate a tunneling transistor?

Questions and Answers

0 Like 0 Dislike

Yasin Khatami @ 8:48 pm on 13 Aug 2012

Can nanoMOS simulate a tunneling transistor?

I’m wondering if nanoMOS can simulate a tunneling transistor. It’s a gated p-i-n diode.

tool:nanomos

Chosen Answer

1 Like 0 Dislike

Kurtis Cantley @ 9:37 am on 14 Aug 2012

Yasin, NanoMOS is only set up to handle symmetric, ultra-thin body double-gate MOSFET structures. It also only accounts for the conduction band of the semiconductor, so its not able to simulate band-to-band tunneling. While the NEGF formalism can be used to model tunnel FETs, NanoMOS is not capable of doing so.

Reply Report abuse

Please login to answer the question.

1 Responses

1 Like 0 Dislike

Anonymous @ 11:35 am on 14 Aug 2012

nanoMOS is a single band program – it can treat intra-band tunneling, but not inter-band tunneling (i.e. from conduction to valence band). Tunneling transistors generally make use of inter-band tunneling for which nanoMOS is not suitable.

Reply Report abuse

Please login to answer the question.