Tags: Verilog-A

More tags

All Categories (1-20 of 20)

  1. WHiTe Compact Models

    19 Mar 2023 | Compact Models | Contributor(s):

    By Neal Graham Wood

    This package provides a set of 4H SiC (silicon carbide) high-temperature integrated device compact models, written in industry standard Verilog-A; currently included are a resistor and a JFET...

    https://nanohub.org/publications/339/?v=12

  2. Compact Model Vortex-STNO

    17 Nov 2022 | Compact Models | Contributor(s):

    By Sonal Shreya1, Farshad Moradi1

    Aarhus University, Denmark

    we present a Verilog-A-based analytical model of a vortex spin-torque nano oscillator (V-STNO) for enabling circuit-level simulation. The model presented here is functional for both linearand...

    https://nanohub.org/publications/532/?v=1

  3. WHiTe Compact Models

    14 Jun 2022 | Compact Models | Contributor(s):

    By Neal Graham Wood

    This package provides a set of 4H SiC (silicon carbide) high-temperature integrated device compact models, written in industry standard Verilog-A; currently included are a resistor and a JFET...

    https://nanohub.org/publications/339/?v=11

  4. WHiTe Compact Models

    30 Oct 2021 | Compact Models | Contributor(s):

    By Neal Graham Wood

    This package provides a set of 4H SiC (silicon carbide) high-temperature integrated device compact models, written in industry standard Verilog-A; currently included are a resistor and a JFET...

    https://nanohub.org/publications/339/?v=10

  5. WHiTe Compact Models

    28 Aug 2021 | Compact Models | Contributor(s):

    By Neal Graham Wood

    This package provides a set of 4H SiC (silicon carbide) high-temperature integrated device compact models, written in industry standard Verilog-A; currently included are a resistor and a JFET...

    https://nanohub.org/publications/339/?v=9

  6. WHiTe Compact Models

    06 Aug 2021 | Compact Models | Contributor(s):

    By Neal Graham Wood

    This package provides a set of 4H SiC (silicon carbide) high-temperature integrated device compact models, written in industry standard Verilog-A; currently included are a resistor and a JFET...

    https://nanohub.org/publications/339/?v=8

  7. A Circuit-compatible SPICE Model for Phase-field Simulations of Multi-domain Ferroelectrics

    Downloads | 17 May 2021 | Contributor(s):: Chia-Sheng Hsu, Sou-Chi Chang, Dmitri Nikonov, Ian Alexander Young, Azad Naeemi

    To describe the multi-domain FE switching dynamics, we present a circuit-compatible model that can solve the time-dependent Ginzburg-Landau (TDGL) equation and Poisson’s equation self-consistently in three-dimensional space with the SPICE simulator. In addition, the FE domain structures...

  8. Peking University Analog-Switching Resistive Random Access Memory (RRAM) Verilog-A model

    13 Jan 2021 | Compact Models | Contributor(s):

    By Lixia Han1, Linlin Cai1, Jinfeng Kang1, Xiaoyan Liu1, Peng Huang1

    Peking University

    The Peking University Analog-switching RRAM physical model can capture the pulse conductance updates of analog RRAM devices rapidly and accurately. The model is described by Verilog-A and can be...

    https://nanohub.org/publications/403/?v=1

  9. WHiTe Compact Models

    01 Nov 2020 | Compact Models | Contributor(s):

    By Neal Graham Wood

    This package provides a set of 4H SiC (silicon carbide) high-temperature integrated device compact models, written in industry standard Verilog-A; currently included are a resistor and a JFET...

    https://nanohub.org/publications/339/?v=7

  10. WHiTe (Wood-High-Temperature) Compact Models

    16 Apr 2020 | Compact Models | Contributor(s):

    By Neal Wood

    Toshiba Europe Limited

    This package provides a set of 4H silicon carbide high-temperature integrated device compact models, written in industry standard Verilog-A; currently included are a resistor and a junction...

    https://nanohub.org/publications/339/?v=3

  11. Unimore Resistive Random Access Memory (RRAM) Verilog-A Model

    22 May 2019 | Compact Models | Contributor(s):

    By Francesco Maria Puglisi1, Tommaso Zanotti1, Paolo Pavan1

    Università di Modena e Reggio Emilia

    The Unimore RRAM Verilog-A model is a physics-based compact model of bipolar RRAM which includes cycle-to-cycle variability, thermal effects, self-heating, and multilevel Random Telegraph Noise (RTN).

    https://nanohub.org/publications/289/?v=1

  12. W. S. Grabinski

    https://www.researchgate.net/profile/Wladek_Grabinski

    https://nanohub.org/members/217741

  13. Camillo Stefanucci

    https://nanohub.org/members/188454

  14. I want to make a compact model for FinFET with Verilog-A to use it in HSpice, but I'm really new in this subject and don't know where to start. Can anyone help me with some documents in this subject?

    Q&A|Closed | Responses: 0

    https://nanohub.org/answers/question/1942

  15. MIT TFET compact model including the impacts of non-idealities

    03 May 2017 | Compact Models | Contributor(s):

    By Redwan Noor Sajjad1, Ujwal Radhakrishna2, Dimitri Antoniadis1

    1. Massachusetts Institute of Technology 2. Massachusetts Institute of Technology (MIT)

    We present a compact model for tunnel FET that for the first time fits experimental transfer and output characteristics including the impact of non-idealities such as trap assisted tunneling and...

    https://nanohub.org/publications/181/?v=1

  16. Flexible Transition Metal Dichalcogenide Field-Effect Transistor (TMDFET) Model

    07 Apr 2016 | Compact Models | Contributor(s):

    By Morteza Gholipour1, Deming Chen2

    1. Babol University of Technology 2. University of Illinois at Urbana-Champaign

    Verilog-A model of flexible transition metal dichalcogenide field-effect transistors (TMDFETs), considering effects when scaling the transistor size down to the 16-nm technology node.

    https://nanohub.org/publications/134/?v=1

  17. Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs

    06 Apr 2016 | Compact Models | Contributor(s):

    By Jorge-Daniel Aguirre Morales1, Sébastien Frégonèse2, Chhandak Mukherjee3, Cristell Maneux3, Thomas Zimmer3

    1. CNRS, University of Bordeaux, IMS Laboratory 2. CNRS, IMS Laboratory 3. University of Bordeaux, IMS Laboratory

    A compact model for simulation of Dual-Gate Bilayer Graphene FETs based on physical equations.

    https://nanohub.org/publications/133/?v=1

  18. Ozgur Polat

    https://nanohub.org/members/104542

  19. 7nm Si FinFET Models with Symmetric and Asymmetric Underlap for Circuit Simulations

    Downloads | 23 Aug 2013 | Contributor(s):: Arun Goud Akkala, Sumeet Kumar Gupta, Sri Harsha Choday, Kaushik Roy

    This tarball contains Verilog-A compact lookup table models for 7nm channel length Si FinFET with different underlaps which can be used in HSPICE netlists for circuit simulations. Device simulation data for constructing the lookup table model was generated using NEMO5 atomistic...

  20. Introduction to Compact Models and Circuit Simulation

    Online Presentations | 21 Jun 2013 | Contributor(s):: Jaijeet Roychowdhury

    With NEEDS introduction by Mark Lundstrom. This talk contains a brief introduction to Verilog-A and suggests some initial guidelines for writing Verilog-A versions of NEEDS models.