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Transistor Mania: Modeling Electron Flow
Teaching Materials | 17 Jun 2021 | Contributor(s):: Meghan Saxer, NNCI Nano
This activity is designed to help the students understand the significance of transistors in their lives. Students will learn how current research on nanoscale transistors is making their favorite electronic devices (i.e., cell phones, gaming devices, computers, etc.) faster and more powerful....
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25 Linearity by Synthesis: An Intrinsically Linear AlGaN/GaN-on-Si Transistor with OIP3/(F-1)PDC of 10.1 at 30 GHz
Online Presentations | 21 Sep 2020 | Contributor(s):: Woojin Choi, Venkatesh Balasubramanian, Peter M. Asbeck, Shadi Dayeh
The concept of an intrinsically synthesizable linear device is demonstrated. It was implemented by changing only the device layout; additional performance gains can be attained by further materials engineering.
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Mini Course: Searching for the Milli-Volt Switch
Online Presentations | 17 Apr 2020 | Contributor(s):: Center for E3S, Sapan Agarwal
Sapan Agarwal, a PhD student at UC Berkeley, leads a mini course on Searching for the Milli-volt Switch. Sapan is a student in the NSF Funded Center for Energy Efficient Electronics Science.
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Nanotechnology in Electronics: An Introduction to the units on LEDs, Thermistors, and Transistors
Teaching Materials | 12 Jan 2020 | Contributor(s):: Jacyln Murray, NNCI Nano
The purpose of the following group of lab units is to illustrate properties associated with nanotechnology and the electronics industry through utilization of semiconductors. By using macro-examples of actual nano-circuitry, students will understand what is happening on the...
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Moore’s Law Extension and Beyond
Online Presentations | 19 Nov 2018 | Contributor(s):: Peide "Peter" Ye
In his talk, Ye will review his research efforts at Purdue on materials, structures and device architecture to support the microelectronic industry and extend Moore’s Law. The goal of the research is that it will lead to smarter, ubiquitous computing technology and keep us healthier,...
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Electron Transport in Schottky Barrier CNTFETs
Papers | 24 Oct 2017 | Contributor(s):: Igor Bejenari
This resource has been removed at the request of the author.A given review describes models based on Wentzel-Kramers-Brillouin approximation, which are used to obtain I-V characteristics for ballistic CNTFETs with Schottky-Barrier (SB) contacts. The SB is supposed to be an exponentially...
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Quantum Spins in the Solid-State: An Atomistic Material-to-Device Modeling Approach
Online Presentations | 30 Aug 2017 | Contributor(s):: Rajib Rahman
In this talk, I will present an atomistic modeling approach that combines intrinsic material and extrinsic device properties under a unified framework to describe spins and their interactions with theenvironment. This approach captures important spin properties such as exchange, spin-orbit,...
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Directing Crystallization and Assembly for Printed Electronics
Online Presentations | 19 Dec 2016 | Contributor(s):: Ying Diao
Over the past thirty years, organic semiconductors have emerged as a new class of electronic and photoelectronic materials that are light- weight, flexible and can be manufactured using energy-efficient and high-throughput methods. The solution printability at near ambient conditions enables...
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A Short Overview of the NEEDS Initiative
Online Presentations | 06 Jun 2016 | Contributor(s):: Mark Lundstrom
The talk is a brief overview of the program that discusses the rationale, status, and plans for NEEDS.
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Multiscale Modeling of Graphene-Metal Contacts
Online Presentations | 01 Feb 2016 | Contributor(s):: T. Cusati, Gianluca Fiori, A. Fortunelli, Giuseppe Iannaccone
IWCE 2015 presentation. The quality of contacts between metals and two- dimensional materials is a critical aspect for the performance of transistors based on two-dimensional materials. In this talk we focus on an approach to multiscale modeling of graphene- metal contacts, considering both...
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High-Frequency Carbon Nanotube Transistors: A Multi-Scale Simulation Framework
Online Presentations | 07 Jan 2015 | Contributor(s):: Martin Claus
The talk gives an overview on a multi-scale simulation framework with which this question can be answered. Methods to study the steady-state and transient quantum and semi-classical transport phenomena in CNTFETs and their application for the optimization of CNTFETs will be discussed. Special...
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The MVS Nanotransistor Model: A Primer
Online Presentations | 26 Nov 2014 | Contributor(s):: Mark Lundstrom
In this talk, I will present a gentle introduction to the MVS model. I’ll show how the basic equations of the model can be obtained by using a traditional approach to MOSFETs. I’ll then indicate how the parameters in this traditional model must be re-interpreted in order to capture...
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The MVS Nanotransistor Model: A Case Study in Compact Modeling
Online Presentations | 26 Nov 2014 | Contributor(s):: Shaloo Rakheja
In this talk, I will present my view on building an industry-standard compact model by using the MVS model as a case study. In the first part of the talk, I discuss mathematical issues, such as the smoothness of functions and their higher-order derivatives in connection with the MVS model....
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Basics of Compact Model Development
Online Presentations | 02 Aug 2014 | Contributor(s):: Sivakumar P Mudanai
This tutorial is aimed at developing an understanding of what a compact model is, the need and role of compact models in the semiconductor industry and the requirements that a compact model must meet for acceptable use in circuit simulations. The tutorial will use simple examples from planar...
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RF Solid-State Vibrating Transistors
Online Presentations | 15 Feb 2014 | Contributor(s):: Dana Weinstein
In this talk, I will discuss the Resonant Body Transistor (RBT), which can be integrated into a standard CMOS process. The first hybrid RF MEMS-CMOS resonators in Si at the transistor level of IBM’s SOI CMOS process, without any post-processing or packaging will be described. ...
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Efficiency Enhancement for Nanoelectronic Transport Simulations
Papers | 02 Feb 2014 | Contributor(s):: Jun Huang
PhD thesis of Jun HuangContinual technology innovations make it possible to fabricate electronic devices on the order of 10nm. In this nanoscale regime, quantum physics becomes critically important, like energy quantization effects of the narrow channel and the leakage currents due to tunneling....
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ECE 612 Lecture 9: Subthreshold Conduction
Online Presentations | 25 Jan 2014 | Contributor(s):: Mark Lundstrom
Please view ECE 612 Lecture 12: Subthreshold Conduction from the 2006 teaching.
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ECE 612 Lecture 10: Threshold Voltage and MOSFET Capacitances
Online Presentations | 25 Jan 2014 | Contributor(s):: Mark Lundstrom
Please view ECE 612 Lecture 13: Threshold Voltage and MOSFET Capacitances from the 2006 teaching.
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Tunnel FETs - Device Physics and Realizations
Online Presentations | 10 Jul 2013 | Contributor(s):: Joachim Knoch
Here, the operating principles of TFETs will be discussed in detail and experimental realizations as well as simulation results will be presented. In particular, the role of the injecting source contact will be elaborated on.
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The Road Ahead for Carbon Nanotube Transistors
Online Presentations | 09 Jul 2013 | Contributor(s):: Aaron Franklin
In this talk, recent advancements in the nanotube transistor field will be reviewed, showing why CNTFETs are worth considering now more than ever. Then, the material- and device-related challenges to realizing a nanotube-driven digital technology will be covered.