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NEMO3D User Guide for Quantum Dot Simulations
Papers | 29 Nov 2011 | Contributor(s):: M. Usman, Gerhard Klimeck
NEMO 3D is a large and complex simulator; and understanding of its source code requires considerable knowledge of quantum mechanics, condensed matter theory, and parallel programming.
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Transient Heat Conduction in Adjacent Materials Heated on Part of the Common Boundary
Papers | 01 Nov 2011 | Contributor(s):: Donald E. Amos
This paper considers a classical linear, transient heat conduction problem set in Regions 1 and 2 defined by the half planes x>0 and x
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Interface structure and surface morphology of (Co, Fe, Ni)/Cu/Si(100) thin films
Papers | 07 Oct 2011 | Contributor(s):: Brian Demczyk, V.M. Naik, A. Lukaszew, R. Naik, G. W. Auner
We have examined bilayer Co/Cu, Fe/Cu, and Ni/Cu films deposited by molecular-beam epitaxy onhydrogen-terminated @100# silicon substrates.
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Oxidation Behavior of CoCr Thin Films
Papers | 07 Oct 2011 | Contributor(s):: Brian Demczyk
In this work, elemental redistribution of annealed CoCr thin films has been investigated by X-ray photoelectron spectroscopy.
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Growth of Cu films on hydrogen terminated Si(lQ0) and Si(lll) surf&es
Papers | 07 Oct 2011 | Contributor(s):: Brian Demczyk, R. Naik, G. Auner, C. Kota, U. Rao
We have employed reflection high energy electron diffraction (RHEED) and high resolutiontransmission electron microscopy (HREM) to study Cu films grown on hydrogen terminatedSi( 100) and Si( 111) substrates by molecular beam epitaxy.
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Origin of the orientation ratio in sputtered longitudinal media
Papers | 07 Oct 2011 | Contributor(s):: Brian Demczyk, J. N. Zhou, G. Choe, E. Stach, E. C. Nelson, U. Dahmen
The surface morphology, thin film microstructure, and crystallography of sputtered longitudinalmedia were examined by atomic force and transmission electron microscopy.
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Magnetic properties of magnetron sputtered Co-Cr thin films
Papers | 07 Oct 2011 | Contributor(s):: Brian Demczyk, J. O. Artman
The magnetic properties 01 magnetron sputtered CO-22 at.% Cr films of various thickness deposited on glass have been examined, with particular attentionto the various contributions to the film anisotropy
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Direct mechanical measurement of the tensile strength and elastic modulus of multiwalled carbon nanotubes
Papers | 07 Oct 2011 | Contributor(s):: Brian Demczyk, Y.M. Wang, J. Cumings, M. Hetman, W. Han, A. Zettl. R. O. Ritchie
This work represents the first in-situ measurenment of the tensile strength of a carbon nanotuube.
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Theory and characterization of random defect formation and its implication in variability of nanoscale transistors
Papers | 30 Sep 2011 | Contributor(s):: Ahmad Ehteshamul Islam
Over the last 50 years, carrier transport has been the central research topic in the semiconductor area. The outcome was a dramatic improvement in the performance of a transistor, which is one of the basic building blocks in almost all the modern electronic devices. However, nanoscale dimensions...
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Rappture setup in Ubuntu
Papers | 23 Aug 2011 | Contributor(s):: David Alberto Saenz
This is a short article about how to set up a functional copy of a rappture development environment simmilar to the workspace but in a local machine. This permits the user to make use of their own software licenses and develop rappture programs in matlab regardless of being outside the premises...
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report on carbon nantubes complete
Papers | 11 Jul 2011 | Contributor(s):: kadis prasad
cnt complete information
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Performance of Magnetic Quantum Cellular Automata and Limitations due to Thermal Noise
Papers | 02 Jun 2011 | Contributor(s):: Ajey Jacob, Dmitri Nikonov
Operation parameters of magnetic quantum cellular automata are evaluated for the purposes ofreliable logic operation. The dynamics if nanomagnets is simulated via Landau-Lifshitz-Gilbert equations with stochastic magnetic field corresponding to thermal fluctuations. It is found that in the...
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Monte Carlo Method and Its Applications
Papers | 29 Jan 2011 | Contributor(s):: Dragica Vasileska
This book chapter describes the solution of the Boltzmann transport equation via the MC method and it also presents its application of various types of devices simulations.
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Quantum and Coulomb Effects in Nanodevices
Papers | 29 Jan 2011 | Contributor(s):: Dragica Vasileska
This book chapter presents ways of incorporating quantum mechanical size-quantization and tunneling effects as well as short-range Coulomb interactions within a particle-based device simulation scheme.
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Modeling the quantum dot growth in the continuum approximation
Papers | 12 Jan 2011 | Contributor(s):: Peter Cendula
Quantum dots can grow spontaneously during molecular beam epitaxy oftwo materials with different lattice parameters, Stranski-Krastanow growth mode.We study a mathematical model based on the continuum approximation of thegrowing layer in two dimensions. Nonlinear evolution equation is solved...
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Coupled Effect of Strain and Magnetic Field on Electronic Bandstructure of Graphene
Papers | 07 Dec 2010 | Contributor(s):: yashudeep singh
We explore the possibility of coupling between planar strain and perpendicular magnetic field on electronic bandstructure of graphene. We study uni-axially, bi-axially and shear strained graphene under magnetic field. In line with Rammal’s formalism using nearest neighbor tight binding scheme we...
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Surface scattering: Made simple
Papers | 03 Sep 2010 | Contributor(s):: Dmitri Nikonov, Himadri Pal
Surface scattering in a quantum well.
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Anisotropic magnetoresistance in colossal magnetoresistive La1-xSrxMnO3 thin films
Papers | 03 Sep 2010 | Contributor(s):: Jeng-Bang (Tony) Yau
We report on magnetic field and temperature dependent measurements of the anisotropic magnetoresistance (AMR) in epitaxial La1-xSrxMnO3 (LSMO) thin flms. While in 3d ferromagnetic alloys increasing the magnetization, either by reducing the temperature or increasing the magnetic field, increases...
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Quantum transport in semiconductor nanostructures
Papers | 04 Mar 2010 | Contributor(s):: Tillmann Christoph Kubis
PhD thesis of Tillmann Christoph KubisThe main objective of this thesis is to theoretically predict the stationary charge and spin transport in mesoscopic semiconductor quantum devices in the presence of phonons and device imperfections. It is well known that the nonequilibrium Green's function...
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Scattering in NEGF: Made simple
Papers | 09 Nov 2009 | Contributor(s):: Dmitri Nikonov, Himadri Pal, George Bourianoff
Formalism for describing electron-phonon scattering, surface scattering, and spin relaxation is dervied for the Keldysh non-equilibrium Green's functions (NEGF) method. Approximation useful for efficient numerical solution are described. The specific case of the nanoMOS simulator is...