Growth of Cu films on hydrogen terminated Si(lQ0) and Si(lll) surf&es

By Brian Demczyk1; R. Naik; G. Auner; C. Kota; U. Rao

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Abstract

We have employed reflection high energy electron diffraction (RHEED) and high resolution
transmission electron microscopy (HREM) to study Cu films grown on hydrogen terminated
Si( 100) and Si( 111) substrates by molecular beam epitaxy.

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Researchers should cite this work as follows:

  • Brian Demczyk, R. Naik, G. Auner, C. Kota, U. Rao (2011), "Growth of Cu films on hydrogen terminated Si(lQ0) and Si(lll) surf&es," https://nanohub.org/resources/12235.

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Tags

  1. interface roughness
  2. interfaces
  3. materials science
  4. nanoelectronics
  5. thin films