Tags: MOSFET

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Description

The metal–oxide–semiconductor field-effect transistor is a device used for amplifying or switching electronic signals. In MOSFETs, a voltage on the oxide-insulated gate electrode can induce a conducting channel between the two other contacts called source and drain. The channel can be of n-typeor p-type, and is accordingly called an nMOSFET or a pMOSFET (also commonly nMOS, pMOS). It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. More information on MOSFET can be found here.

Online Presentations (21-40 of 78)

  1. ABACUS MOSFETs (Winter 2021)

    Online Presentations | 08 Feb 2022 | Contributor(s):: Gerhard Klimeck

    In the seventh session, Dr. Gerhard Klimeck will give a brief overview of ABACUS and demonstrate the MOSFET Lab. Students can experiment with the classical scaling of a traditional 2D MOSFET....

  2. ABACUS MOS Capacitors (Winter 2021)

    Online Presentations | 31 Jan 2022 | Contributor(s):: Gerhard Klimeck

    In the sixth session, Dr. Gerhard Klimeck will give a brief overview of ABACUS and demonstrate the MOS Capacitor Lab. Students can experiment with the fundamental component of a MOSfet that is any computer chip...

  3. IWCN 2021: Simulation of Ballistic Spin-MOSFET Devices with Ferromagnetic Channels

    Online Presentations | 15 Jul 2021 | Contributor(s):: Patrizio Graziosi, Neophytos Neophytou

    In this work, using the semiclassical top-of-the-barrier FET model, and a spin dependent contact resistance model derived from, we explore the operation of a spin-MOSFET that utilizes such ferromagnetic semiconductors as channel materials, in addition to ferromagnetic source/drain contacts.

  4. IWCN 2021: Electronic States in 4H-SiC MOS Inversion Layers Considering Crystal Structure Using Empirical Pseudopotential Method

    Online Presentations | 15 Jul 2021 | Contributor(s):: Sachika Nagamizo, Hajime Tanaka, Nobuya Mori

    In this study, to analyze the electronic states in 4H-SiC MOS inversion layers taking account of this feature, we described the crystal structure of 4H-SiC including the internal channel space using the empirical pseudopotential method, and we calculated the electronic states in the triangular...

  5. IWCN 2021: Computational Research of CMOS Channel Material Benchmarking for Future Technology Nodes: Missions, Learnings, and Remaining Challenges

    Online Presentations | 15 Jul 2021 | Contributor(s):: raseong kim, Uygar Avci, Ian Alexander Young

    In this preentation, we review our journey of doing CMOS channel material benchmarking for future technology nodes. Through the comprehensive computational research for past several years, we have successfully projected the performance of various novel material CMOS based on rigorous physics...

  6. IWCN 2021: Ab initio Quantum Transport Simulation of Lateral Heterostructures Based on 2D Materials: Assessment of the Coupling Hamiltonians

    Online Presentations | 14 Jul 2021 | Contributor(s):: Adel Mfoukh, Marco Pala

    Lateral heterostructures based on lattice-matched 2D materials are a promising option to design efficient electron devices such as MOSFETs [1], tunnel-FETs [2] and energy-filtering FETs [3]. In order to rigorously describe the transport through such heterostructures, an ab-initio approach based...

  7. Moore’s Law Extension and Beyond

    Online Presentations | 19 Nov 2018 | Contributor(s):: Peide "Peter" Ye

    In his talk, Ye will review his research efforts at Purdue on materials, structures and device architecture to support the microelectronic industry and extend Moore’s Law. The goal of the research is that it will lead to smarter, ubiquitous computing technology and keep us healthier,...

  8. A Tutorial Introduction to Negative-­Capacitor Landau Transistors: Perspectives on the Road Ahead

    Online Presentations | 04 Dec 2015 | Contributor(s):: Muhammad A. Alam

    In this talk, I use a simple graphical approach to demystify the device and explain why the experimental results are easy to misinterpret. Since the NC-FET is just a special case of a much broader class of phase-change devices and systems (e.g., transistors, memories, MEMS, logic-in-memory...

  9. Green Light on Germanium

    Online Presentations | 02 Nov 2015 | Contributor(s):: peide ye

    This talk will review recent progress as well as challenges on Ge research for future logic applications with emphasis on the breakthrough work at Purdue University on Ge nFET which leads to the demonstration of the world first Ge CMOS circuits on Si substrates. Ge device technology includes...

  10. The MVS Nanotransistor Model: A Primer

    Online Presentations | 26 Nov 2014 | Contributor(s):: Mark Lundstrom

    In this talk, I will present a gentle introduction to the MVS model. I’ll show how the basic equations of the model can be obtained by using a traditional approach to MOSFETs. I’ll then indicate how the parameters in this traditional model must be re-interpreted in order to capture...

  11. Basics of Compact Model Development

    Online Presentations | 02 Aug 2014 | Contributor(s):: Sivakumar P Mudanai

    This tutorial is aimed at developing an understanding of what a compact model is, the need and role of compact models in the semiconductor industry and the requirements that a compact model must meet for acceptable use in circuit simulations. The tutorial will use simple examples from planar...

  12. Tunnel FETs - Device Physics and Realizations

    Online Presentations | 10 Jul 2013 | Contributor(s):: Joachim Knoch

    Here, the operating principles of TFETs will be discussed in detail and experimental realizations as well as simulation results will be presented. In particular, the role of the injecting source contact will be elaborated on.

  13. ECE 695A Lecture 9R: Review Questions

    Online Presentations | 08 Feb 2013 | Contributor(s):: Muhammad Alam

    Review Questions:Does NBTI power-exponent depend on voltage or temperature?Do you expect the NBTI power-exponent to be larger or smaller if trapping is important?How does one know that the diffusing species is neutral?How would the time-exponent different for a surround gate MOSFET vs. planar...

  14. ECE 606 Lecture 27: Looking Back and Looking Forward

    Online Presentations | 20 Dec 2012 | Contributor(s):: Gerhard Klimeck

  15. ECE 606 Lecture 25: Modern MOSFETs

    Online Presentations | 03 Dec 2012 | Contributor(s):: Gerhard Klimeck

  16. ECE 606 Lecture 22: MOScap Frequence Response/MOSFET I-V Characteristics

    Online Presentations | 26 Nov 2012 | Contributor(s):: Gerhard Klimeck

  17. ECE 606 Lecture 23: MOSFET I-V Characteristics/MOSFET Non-Idealities

    Online Presentations | 26 Nov 2012 | Contributor(s):: Gerhard Klimeck

  18. ECE 606 Lecture 24: MOSFET Non-Idealities

    Online Presentations | 26 Nov 2012 | Contributor(s):: Gerhard Klimeck

  19. Nanoscale Transistors Lecture 11: MOSFET Limits and Possibilities

    Online Presentations | 19 Jul 2012 | Contributor(s):: Mark Lundstrom

  20. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Fast and Ultra-fast Characterization Methods (Part 1 of 3)

    Online Presentations | 28 Mar 2012 | Contributor(s):: Souvik Mahapatra