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Asifali Mir
As simple as QM
https://nanohub.org/members/214226
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David Christopher Horton
https://nanohub.org/members/168110
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MIT Virtual Source GaN HEMT-High Voltage (MVSG-HV) compact model
29 Aug 2015 | Compact Models | Contributor(s):
By Ujwal Radhakrishna1, Dimitri Antoniadis2
1. Massachusetts Institute of Technology (MIT) 2. Massachusetts Institute of Technology
MIT Virtual Source GaN HEMT-High Voltage (MVSG-HV) model is a charge based physical model for HV-GaN HEMTs suitable for power switching applications.
https://nanohub.org/publications/73/?v=1
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Nanoelectronic Modeling Lecture 41: Full-Band and Atomistic Simulation of Realistic 40nm InAs HEMT
Online Presentations | 05 Aug 2010 | Contributor(s):: Gerhard Klimeck, Neerav Kharche, Neophytos Neophytou, Mathieu Luisier
This presentation demonstrates the OMEN capabilities to perform a multi-scale simulation of advanced InAs-based high mobility transistors.Learning Objectives:Quantum Transport Simulator Full-Band and Atomistic III-V HEMTs Performance Analysis Good Agreement with Experiment Some Open Issues...
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Trupti Ranjan Lenka
Dr. Lenka works as an Associate Professor in Electronics and Communication Engineering at the National Institute of Technology Silchar, Assam. He received Ph.D. in Microelectronics Engineering from...
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