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47 Electrostatic Engineering in BaTiO3/β-Ga2O3 Heterostructure Field Effect Transistors
Online Presentations | 14 Oct 2020 | Contributor(s):: Nidhin Kurian Kalarickal, Zhanbo Xia, Wyatt Moore, Joe McGlone, Aaron R. Arehart, Steven A. Ringel, Siddharth Rajan
We report on the design and demonstration of BaTiO3/β-Ga2O3 based lateral field effect transistors with superior breakdown performance. Utilizing the high-k low-k dielectric interface allows significant improvement in electrostatic field management giving a breakdown voltage of 1.1 KV at 5...
Arijit Sengupta
https://nanohub.org/members/209943
Mohamed Tarek Ghoneim
https://nanohub.org/members/77955
Theory and characterization of random defect formation and its implication in variability of nanoscale transistors
Papers | 30 Sep 2011 | Contributor(s):: Ahmad Ehteshamul Islam
Over the last 50 years, carrier transport has been the central research topic in the semiconductor area. The outcome was a dramatic improvement in the performance of a transistor, which is one of the basic building blocks in almost all the modern electronic devices. However, nanoscale dimensions...