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GaN transistors - TTF
Q&A|Closed | Responses: 2
Hello ,
First of all , i would like to thank you for this valuable presantaion .
i am doing a phd thisis that focus on GaN transistors...
https://nanohub.org/answers/question/2497
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Shonkho Shuvro
Shonkho Shuvro is currently a Ph.D. scholar at CeNSE, IISc Bangalore. He did his master's in "VLSI Design" from IIEST, Shibpur, India. He is working on GaN devices on heterogeneous integration on...
https://nanohub.org/members/294475
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EPFL HEMT MODEL
14 Aug 2019 | Compact Models | Contributor(s):
By Farzan Jazaeri1, jean-michel sallese, Majid Shalchian2, Matthias Bucher3, Nikolaos Makris4
1. École Polytechnique Fédérale de Lausanne,(EPFL) 2. Amirkabir University of Tehnology 3. Technical University of Crete 4. ECE Technical University of Crete / IESL Foundation for Research and Technology-Hellas
The EPFL HEMT Model is a design-oriented charge-based model for dc operation of AlGaAs/GaAs and AlGaN/GaN-based high-mobility field-effect transistors. The intrinsic model is physics-based and the...
https://nanohub.org/publications/301/?v=1
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[Poster] MIT Virtual Source GaNFET Model: RF Circuit Design and Experimental Verification
Presentation Materials | 25 May 2016 | Contributor(s):: Ujwal Radhakrishna
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Nour Boukortt, Ph.D.
https://nanohub.org/members/133335
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MIT Virtual Source GaN HEMT-High Voltage (MVSG-HV) compact model
29 Aug 2015 | Compact Models | Contributor(s):
By Ujwal Radhakrishna1, Dimitri Antoniadis2
1. Massachusetts Institute of Technology (MIT) 2. Massachusetts Institute of Technology
MIT Virtual Source GaN HEMT-High Voltage (MVSG-HV) model is a charge based physical model for HV-GaN HEMTs suitable for power switching applications.
https://nanohub.org/publications/73/?v=1
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How to simulate the GaN Power Device model
Q&A|Closed | Responses: 0
Hello All,
I’m new to device modeling and I want to numerically simulate GaN device equations using...
https://nanohub.org/answers/question/1317
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How to simulate the GaN Power Device model
Q&A|Closed | Responses: 0
Hello All,
I’m new to device modeling and I want to numerically simulate GaN device equations using...
https://nanohub.org/answers/question/1316
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Modeling Self-Heating Effects in SOI Devices and GaN HEMTs
Presentation Materials | 12 Jun 2013 | Contributor(s):: Dragica Vasileska
The role of self-heating effects is investigated in SOI devices and GaN HEMTs.
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Niraj Man Shrestha
https://nanohub.org/members/75934
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Research Within Vasileska Group
Presentation Materials | 29 Jun 2010 | Contributor(s):: Dragica Vasileska
This presentation outlines recent progress in reseach within Vasileska group in the area of random telegraph noise and thermal modeling, and modeling of GaN HEMTs.