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Negative Bias Temperature Instability (NBTI) in p-MOSFETs: The Impact of Gate Insulator Processes (Part 2 of 3)
Online Presentations | 28 Mar 2012 | Contributor(s):: Souvik Mahapatra
This presentation is part 2 on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner...
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Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Predictive Modeling (Part 3 of 3)
Online Presentations | 28 Mar 2012 | Contributor(s):: Souvik Mahapatra
This is a presentation on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner SiON...
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Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Characterization, Material/Process Dependence and Predictive Modeling
Courses | 28 Mar 2012 | Contributor(s):: Souvik Mahapatra
This is a presentation on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner SiON...
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Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Characterization, Material/Process Dependence and Predictive Modeling (2011)
Online Presentations | 11 May 2011 | Contributor(s):: Souvik Mahapatra
This is a presentation on Negative Bias Temperature Instability, or in short NBTI, observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to...
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NanoV: Nanowire-based VLSI Design
Downloads | 08 Sep 2010 | Contributor(s):: muzaffer simsir
In the coming decade, CMOS technology is expected to approach its scaling limitations. Among the proposed nanotechnologies, nanowires have the edge in the size of circuits and logic arrays that have already been fabricated and experimentally evaluated. For this technology, logic-level design...
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ECE 612 Lecture 23: RF CMOS
Online Presentations | 02 Dec 2008 | Contributor(s):: Mark Lundstrom
Outline: 1) Introduction,2) Small signal model,3) Transconductance,4) Self-gain,5) Gain bandwidth product,6) Unity power gain,7) Noise, mismatch, linearity…,8) Examples
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ECE 612 Lecture 22: CMOS Circuit Essentials
Online Presentations | 24 Nov 2008 | Contributor(s):: Mark Lundstrom
Outline: 1) The CMOS inverter,2) Speed,3) Power,4) Circuit performance,5) Metrics,6) Limits.This lecture is an overview of CMOS circuits. For a more detailed presentation, the following lectures from the Fall 2006 teaching of this course should be viewed:Lecture 24: CMOS Circuits, Part I (Fall...
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ECE 612 Lecture 18B: CMOS Process Flow
Online Presentations | 18 Nov 2008 | Contributor(s):: Mark Lundstrom
For a basic, CMOS process flow for an STI (shallow trench isolation process), see: http://www.rit.edu/~lffeee/AdvCmos2003.pdf.This lecture is a condensed version of the more complete presentation (listed above) by Dr. Fuller.
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ECE 612 Lecture 18A: CMOS Process Steps
Online Presentations | 12 Nov 2008 | Contributor(s):: Mark Lundstrom
Outline: 1) Unit Process Operations,2) Process Variations.
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Computational Electronics
Courses | 02 Jun 2006 | Contributor(s):: Dragica Vasileska
Scaling of CMOS devices into the nanometer regime leads to increased processing cost. In this regard, the field of Computational Electronics is becoming more and more important because device simulation offers unique possibility to test hypothetical devices which have not been fabricated yet...