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OMEN_FET
Simulates High Electron Mobility Transistor (HEMT), single-gate MOSFET, and double-gate MOSFET in effective mass approximation
Version 1.2.2 - published on 25 Mar 2016
doi:10.4231/D3BR8MH4Z cite this
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Citations Non-affiliated (3) | Affiliated (2)
Non-affiliated authors
- A. Ortiz-Conde, Andrea Sucre-Gonza?lez, Reydezel Torres-Torres, Joel Molina, Roberto Murphy-Arteaga, Francisco GarciÌa-SaÌnchez, (2016), "Conductance-to-Current-Ratio-Based Parameter Extraction in MOS Leakage Current Models", IEEE Transactions on Electron Devices, 63, 10: pg: 3844-3850, (DOI: 10.1109/TED.2016.2597964)
- J. Chang, L. Register, S.K. Banerjee, (2012), "Topological Insulator Bi 2 Se 3 Thin Films As An Alternative Channel Material In Metal-oxide-semiconductor Field-effect Transistors", JOURNAL OF APPLIED PHYSICS, AIP, 112, 12: pg: 124511-1-124511-6, (DOI: 10.1063/1.4770324)
- J. Chang, L. Register, S.K. Banerjee, (2012), "Topological Insulator Bi2Se3 Thin Films As An Alternative Channel Material In MOSFETs", Journal of Applied Physics, : pg: 1-19, (DOI: 10.1063/1.4770324)
Affiliated authors
- Yang Liu, Xufeng Wang, Mathieu Lusier, Mark Lundstrom, (2009), "Simulation study of device physics issues in III-V MOSFETs at 10nm node", International Semiconductor Device Research Symposium, 2009, International Semiconductor Device Research Symposium, 2009, : pg: 1-2, 12, 978-1-4244-6030-4, (DOI: 10.1109/ISDRS.2009.5378204)
- Neerav Kharche, Gerhard Klimeck, Dae-Hyun Kim, Jesús del Alamo, Mathieu Lusier, (2009), "Performance Analysis of Ultra-Scaled InAs HEMTs", Electron Devices Meeting \IEDM), 2009 IEEE International , Electron Devices Meeting \IEDM), 2009 IEEE International, : pg: 1-4, IEEE, 08, 978-1-4244-5639-0 (DOI: 10.1109/IEDM.2009.5424315 )