Carrier Concentration

By Stephanie Michelle Sanchez1; Ivan Santos1; Stella Quinones1

1. University of Texas at El Paso

Calculate the carrier concentration for a semiconductor material as a function of doping and temperature.

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Version 2.0 - published on 19 Sep 2014

doi:10.4231/D3CJ87M5G cite this

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Abstract

The tool calculates the electron and hole concentration for a semiconductor material for five special cases: intrinsic, N-Type, P-Type, high temperature, and compensated.

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UTEP NCN Research Team

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This project is supported by NSF NCN Grant EEC-0634750.

References

[1] R. Pierret, Semiconductor Device Fundamentals. Addison Wesley Longman, 1996. [2] C. C. Hu, Modern Semiconductor Devices for Integrated Circuits. Upper Saddle River, NJ: Pearson, 2010. [3] B. G. Streetman, S. Banerjee, Solid State Electronic Devices. 5th Edition. Upper Saddle River, NJ: Pearson, 2004.

Cite this work

Researchers should cite this work as follows:

  • Stephanie Michelle Sanchez, Ivan Santos, Stella Quinones (2014), "Carrier Concentration," https://nanohub.org/resources/carrierconc. (DOI: 10.4231/D3CJ87M5G).

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Tags

  1. Carrier Concentration
  2. density of states
  3. doping
  4. Fermi function
  5. nanoelectronics
  6. NCN Group - Semiconductor Device Physics
  7. np-product
  8. N-Type
  9. P-Type