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ECE 606 L31.2: MOSFET Non-Idealities - Threshold Voltage Shift Due to Trapped Charges

By Gerhard Klimeck

Electrical and Computer Engineering, Purdue University, West Lafayette, IN

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ECE 606 L31.2: Threshold Voltage Shift Due to Trapped Charges

by: Gerhard Klimeck

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1. S31.2 Threshold voltage shift … 0

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2. Section 31 MOSFET Non-Idealiti… 10.143476810143477

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3. (2) Idealized MOS Capacitor 21.621621621621621

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4. Distributed Trapped charge in … 78.144811478144817

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5. Distributed Trapped charge in … 212.97964631297967

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6. An Intuitive View 355.45545545545548

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7. Gate Voltage and Oxide Charge 628.32832832832833

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8. Gate Voltage and Oxide Charge 853.25325325325332

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9. Interpretation for Bulk Charge 971.93860527193863

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10. Interpretation for Interface C… 1032.032032032032

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11. Time-dependent shift of Trappe… 1080.613947280614

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12. Bias Temperature Instability (… 1237.6710043376711

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13. Section 31 MOSFET Non-Idealiti… 1363.863863863864

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14. Section 31 MOSFET Non-Idealiti… 1391.5248581915248

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