ECE 606 L27.3: Heterojunction Bipolar Transistor - Types of Heterojunctions

By Gerhard Klimeck

Electrical and Computer Engineering, Purdue University, West Lafayette, IN

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Researchers should cite this work as follows:

  • Gerhard Klimeck (2023), "ECE 606 L27.3: Heterojunction Bipolar Transistor - Types of Heterojunctions," https://nanohub.org/resources/37181.

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ECE 606 L27.3: Types of Heterojunctions
  • S27.3 Types of Heterojunctions 1. S27.3 Types of Heterojunctions 0
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  • Section 27 Heterojunction Bipolar Transistor 2. Section 27 Heterojunction Bipo… 9.0757424090757421
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  • N-Al0.3Ga0.7As: p-GaAs (Type-I Heterojunction) 3. N-Al0.3Ga0.7As: p-GaAs (Type-I… 45.879212545879213
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  • P-Al0.3Ga0.7As : n-GaAs (Type I junctions) 4. P-Al0.3Ga0.7As : n-GaAs (Type … 178.57857857857857
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  • Type I junctions 5. Type I junctions 282.38238238238239
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  • (AlInAs/InP) Type II Junctions 6. (AlInAs/InP) Type II Junctions 299.93326659993329
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  • Type I & II Junctions 7. Type I & II Junctions 430.09676343009676
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  • N-Al0.3Ga0.7As : n-GaAs Junctions 8. N-Al0.3Ga0.7As : n-GaAs Juncti… 470.17017017017019
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  • P-GaSb : n-InAs (Type III) 9. P-GaSb : n-InAs (Type III) 600.06673340006671
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  • P-GaSb : n-InAs (Type III) 10. P-GaSb : n-InAs (Type III) 674.84150817484158
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  • P-GaSb : n-InAs (Type III) 11. P-GaSb : n-InAs (Type III) 689.92325658992331
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  • P-GaSb : n-InAs (Type III) 12. P-GaSb : n-InAs (Type III) 697.997997997998
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  • Type I,II, III 13. Type I,II, III 768.26826826826834
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  • Summary 14. Summary 833.80046713380045
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  • Section 27 Heterojunction Bipolar Transistor 15. Section 27 Heterojunction Bipo… 893.79379379379384
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  • Section 27 Heterojunction Bipolar Transistor 16. Section 27 Heterojunction Bipo… 901.80180180180184
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