Please be advised of scheduled maintenance on Tuesday, June 11, 2024. Expect downtime for most of the day. All running tool sessions will expire during the maintenance window, please plan accordingly. We apologize for any inconvenience.
This is a very good simulation tool to understand the MOSFET transistor. I can clearly understand the explanation of how the on-current of the transistor is being tampered when the gate length of the MOSET and how DIBL is influencing the working of the transitor. Good that the points where we have convergence issues are being addressed. However the inital critic would be to change the channel length as gate length as it could be more useful for understanding and would avoid some confusions. On the other hand, it is good to see the band bending of the source, gate and drain which is usually seen in a book without proper explaination. Great that the double gate model transistors are also included in the simulation package.
2 Like 0 Dislike
Akshay Krishnakumar @ on
5.0 out of 5 stars
This is a very good simulation tool to understand the MOSFET transistor. I can clearly understand the explanation of how the on-current of the transistor is being tampered when the gate length of the MOSET and how DIBL is influencing the working of the transitor. Good that the points where we have convergence issues are being addressed. However the inital critic would be to change the channel length as gate length as it could be more useful for understanding and would avoid some confusions. On the other hand, it is good to see the band bending of the source, gate and drain which is usually seen in a book without proper explaination. Great that the double gate model transistors are also included in the simulation package.
Reply Report abuse
Please login to vote.