IWCN 2021: Interfacial Trap Effects in InAs Gate-all-around Nanowire Tunnel Field- Effect Transistors: First-Principles-Based Approach
Interfacial Trap Effects in InAs Gate-all-around Nanowire Tunnel Field- Effect Transistors: First-Principles-Based Approach
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1. Interfacial Trap Effects in In…
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2. Outline of Presentation
20.02002002002002
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3. Potential of TFET
45.879212545879213
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4. Defect-induced degradation
95.061728395061735
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5. Defect models – previous wor…
168.6353019686353
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6. Contribution
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7. Outline of Presentation
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8. DFT defect modeling
307.2072072072072
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9. DFT defect modeling
338.53853853853855
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10. DFT defect modeling
388.02135468802135
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11. Mode-space in heterostructures
449.61628294961628
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12. NEGF Phonon scattering
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13. Simulation setup / parameters
533.06639973306642
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14. Outline of Presentation
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15. Supercell band structures
555.88922255588921
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16. Local density of states of the…
604.07073740407077
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17. Energy-resolved DOS (NEGF)
670.67067067067069
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18. Density-averaged potential
708.34167500834167
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19. Impact of AsIn
749.88321654988329
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20. Impact of AsDB
803.53687020353686
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21. Impact of a defect on LG scali…
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22. Outline of Presentation
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23. Conclusions
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