FDNS21: Epitaxial Growth of Transition Metal Dichalcogenides – The Path to Wafer-scale Single Crystal Monolayers

By Joan Redwing

Materials Science and Engineering, Penn State University, University Park, PA

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Bio

Joan M. Redwing Joan M. Redwing received her B.S. in Chemical Engineering from the University of Pittsburgh and her Ph.D. in Chemical Engineering from the University of Wisconsin-Madison. After receiving her Ph.D., she was employed as a research engineer at Advanced Technology Materials, Inc. where she worked on the development of group III-nitride materials and devices. Dr. Redwing joined the faculty of the Department of Materials Science and Engineering at Penn State University in 2000. She holds appointments in the Department of Electrical Engineering and the Department of Chemical Engineering at Penn State and is a member of the Materials Research Institute. Dr. Redwing’s research interests are in the general area of electronic materials synthesis and characterization with a specific emphasis on semiconductor thin film, nanowire and 2D materials fabrication by chemical vapor deposition. She currently serves as secretary of the American Association for Crystal Growth and is an associate editor for the Journal of Crystal Growth and the Journal of Materials Research. She is a co-author on over 250 publications in refereed journals and holds 8 U.S. patents.

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Researchers should cite this work as follows:

  • Joan Redwing (2021), "FDNS21: Epitaxial Growth of Transition Metal Dichalcogenides – The Path to Wafer-scale Single Crystal Monolayers," https://nanohub.org/resources/35045.

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Epitaxial Growth of Transition Metal Dichalcogenides – The Path to Wafer-scale Single Crystal Monolayers
  • Epitaxy in 2D: The path to wafer-scale single crystal monolayers and heterostructures 1. Epitaxy in 2D: The path to waf… 0
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  • Layered materials….beyond graphene 2. Layered materials….beyond gr… 79.546212879546218
    00:00/00:00
  • 2D TMDs – Intriguing Properties & Physics 3. 2D TMDs – Intriguing Propert… 102.23556890223557
    00:00/00:00
  • Substrates for TMD epitaxy 4. Substrates for TMD epitaxy 134.46780113446781
    00:00/00:00
  • Considerations for Vapor Phase Synthesis 5. Considerations for Vapor Phase… 251.41808475141809
    00:00/00:00
  • Metalorganic Chemical Vapor Deposition 6. Metalorganic Chemical Vapor De… 336.302969636303
    00:00/00:00
  • Wafer-scale thickness uniformity 7. Wafer-scale thickness uniformi… 460.22689356022693
    00:00/00:00
  • MOCVD Process Modeling 8. MOCVD Process Modeling 567.36736736736736
    00:00/00:00
  • Multi-scale Modeling of WSe2 Growth 9. Multi-scale Modeling of WSe2 G… 664.69803136469807
    00:00/00:00
  • Three step process for WSe2 MOCVD 10. Three step process for WSe2 MO… 708.97564230897569
    00:00/00:00
  • Lateral Growth – Effect of Substrate Temperature 11. Lateral Growth – Effect of S… 808.24157490824166
    00:00/00:00
  • Lateral Growth of WSe2 Islands 12. Lateral Growth of WSe2 Islands 970.337003670337
    00:00/00:00
  • Preferential alignment of WSe2 domains 13. Preferential alignment of WSe2… 1041.775108441775
    00:00/00:00
  • Origin of step-induced alignment 14. Origin of step-induced alignme… 1134.5679012345679
    00:00/00:00
  • Epitaxial WS2 monolayers on sapphire 15. Epitaxial WS2 monolayers on sa… 1237.9045712379045
    00:00/00:00
  • Water-based transfer process for TMDs 16. Water-based transfer process f… 1344.3109776443109
    00:00/00:00
  • Microstructure of WS2 monolayer 17. Microstructure of WS2 monolaye… 1377.4107440774108
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  • TEM analysis of line defects 18. TEM analysis of line defects 1488.355021688355
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  • Nearly single crystal WS2 monolayer 19. Nearly single crystal WS2 mono… 1567.0003336670004
    00:00/00:00
  • Wafer-scale epitaxial TMDs on sapphire 20. Wafer-scale epitaxial TMDs on … 1608.9756423089757
    00:00/00:00
  • Photoluminescence of WS2 monolayers 21. Photoluminescence of WS2 monol… 1621.5548882215548
    00:00/00:00
  • Field-Effect Device Comparison 22. Field-Effect Device Comparison 1716.0827494160828
    00:00/00:00
  • Benchmarking Wafer-Scale MoS2 and WS2 FETs 23. Benchmarking Wafer-Scale MoS2 … 1763.3299966633301
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  • 2D Crystal Consortium 24. 2D Crystal Consortium 1828.0613947280615
    00:00/00:00
  • Lifetime Sample Tracking (LiST) Database 25. Lifetime Sample Tracking (LiST… 1912.912912912913
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  • Acknowledgements 26. Acknowledgements 2012.1454788121455
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