History of SiC Power Devices and a Vision for the Future
History of SiC Power Devices and a Vision for the Future
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1. History of SiC Power Devices a…
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2. Outline
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3. Why Wide Band Gap Semiconducto…
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4. Basic Material Properties
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5. Reverse Bias
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6. Si overcomes the high resistan…
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7. Diode Turn-Off Transient
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8. MOSFET
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9. 1 kV Si IGBT
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10. Si PiN diode
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11. Silicon PiN can be replaced by…
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12. SiC IGBT for 10 – 40 kV Appl…
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13. n-Channel IGBT
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14. Analytical Solution of Ambipol…
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15. On-State Voltage Drop Increase…
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16. Turn-Off Transient under Induc…
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17. Switching Transients become fa…
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18. Maximum Operating frequency fo…
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19. Control of carrier lifetime of…
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20. We developed the First 12 kV p…
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21. The Last 25 Years
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22. MICROXTM-An All-Silicon Techno…
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23. 1.1 kV 4H-SiC Power UMOSFET's
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24. Design of the Power Device
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25. SiC MOSFET
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26. Untitled: Slide 26
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27. Hall mobility and free electro…
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28. Some Critical Materials and Pr…
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29. A 2-3 nm of Ba interlayer betw…
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30. 10 A, 2.4 kV Power DiMOSFETs i…
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31. Large Area, 1600 V / 150 A, 4H…
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32. Some Products my R&D Team Help…
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33. My R&D team at Cree created pr…
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34. A lot can be learned from the …
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35. Ion-Implanted Emitter in BJTs …
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36. SiC BJTs have been successfull…
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37. 700-V Asymmetrical 4H-SiC Gate…
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38. SiC Thyrsitors and GTOs have c…
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